Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5s
20
±8
2.4
1.9
10
0.94
0.9
0.57
- 55 to 150
0.6
0.7
0.46
2.1
1.7
Steady State
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t
≤
5s
Steady State
Symbol
R
thJA
Typical
115
140
Maximum
140
175
Unit
°C/W
Notes:
a. Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web:
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Document Number: 71831
S11-2000-Rev. J, 10-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Si2302ADS
Vishay Siliconix
SPECIFICATIONS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Notes:
a. Pulse test; PW
≤
300 µs, duty cycle
≤
2 %.
b. Effective for production 10/04.
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 2.8
Ω
I
D
≅
3.6 A, V
GEN
= 4.5 V, R
g
= 6
Ω
7
55
16
10
15
80
60
25
ns
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
g
f = 1 MHz
0.5
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.6 A
4.0
0.65
1.5
300
120
80
1
2
Ω
pF
10
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 10 µA
V
DS
= V
GS
, I
D
= 50 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≥
5 V, V
GS
= 2.5 V
V
GS
= 4.5 V, I
D
= 3.6 A
V
GS
= 2.5 V, I
D
= 3.1 A
V
DS
= 5 V, I
D
= 3.6 A
I
S
= 0.94 A, V
GS
= 0 V
6
4
0.045
0.070
8
0.76
1.2
0.060
b
0.115
20
0.65
0.95
1.2
± 100
0.1
2.0
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71831
S11-2000-Rev. J, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2302ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
V
GS
= 5
V
thru 2.5
V
8
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
8
10
6
2
V
4
6
4
2
0
V,
0.5
V,
1
V
2
1.5
V
0
0.0
T
C
= 125 °C
25 °C
- 55 °C
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.15
600
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.12
C - Capacitance (pF)
500
400
C
iss
300
0.09
V
GS
= 2.5
V
0.06
V
GS
= 4.5
V
200
C
oss
100
C
rss
0.03
0.00
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
V
DS
= 10
V
I
D
= 3.6 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
4
R
DS(on)
- On-Resistance
1.8
V
GS
= 4.5
V
I
D
= 3.6 A
Capacitance
1.6
1.4
(
N
ormalized)
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
0.6
- 50
0
50
100
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71831
S11-2000-Rev. J, 10-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71831.
www.vishay.com
4
Document Number: 71831
S11-2000-Rev. J, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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