* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
www.vishay.com
1
PCB Mount (TO-263)
c
Symbol
Free Air (TO-220AB)
R
thJA
R
thJC
Limit
40
62.5
0.8
Unit
°C/W
SUB75P03-07, SUP75P03-07
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= -5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 30 A
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 125 °C
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 175 °C
V
GS
= - 4.5 V, I
D
= - 20 A
Min.
- 30
-1
Typ.
Max.
Unit
-3
± 100
-1
- 50
- 250
V
nA
µA
A
- 120
0.0055
0.007
0.010
0.013
0.008
20
9000
0.010
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
c
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= - 15 V, I
D
= - 75 A
S
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
1565
715
160
240
pF
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 75 A
32
30
25
40
360
240
340
- 75
- 240
nC
Gate-Drain Charge
Rise
Time
c
Turn-On Delay Time
c
Turn-Off Delay Time
Fall Time
c
c
V
DD
= - 15 V, R
L
= 0.2
I
D
- 75 A, V
GEN
= - 10 V, R
g
= 2.5
225
150
210
ns
Source-Drain Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
V
ns
A
µC
I
F
= - 75 A, V
GS
= 0 V
I
F
= - 75 A, dI/dt = 100 A/µs
- 1.2
55
2.5
0.07
- 1.5
100
5
0.25
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
