STE88N65M5
N-channel 650 V, 0.024
Ω
typ., 88 A, MDmesh™ V
Power MOSFET in a ISOTOP™ package
Datasheet
-
production data
Features
Order code
STE88N65M5
V
DS
@T
jmax
R
DS(on)
max
710 V
0.029
Ω
I
D
88 A
•
Very low R
DS(on)
•
Higher V
DSS
rating
•
Higher dv/dt capability
ISOTOP
TM
•
Excellent switching performance
•
100% avalanche tested
Applications
Figure 1. Internal schematic diagram
•
Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order code
STE88N65M5
Marking
88N65M5
Packages
ISOTOP
Packaging
Tube
February 2014
This is information on a product in full production.
DocID025974 Rev 1
1/14
www.st.com
Contents
STE88N65M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
DocID025974 Rev 1
STE88N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM (1)
P
TOT
I
AR
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche
(pulse width limited by T
JMAX
)
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Parameter
Value
± 25
88
55.7
352
494
15
Unit
V
A
A
A
W
A
E
AS
dv/dt
(2)
T
stg
T
j
2000
15
- 55 to 150
150
mJ
V/ns
°C
°C
1. Pulse width limited by safe operating area.
2. I
SD
≤
88 A, di/dt = 400 A/μs, V
DD
= 400 V, V
DS (peak)
< V
(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
Value
0.253
30
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
DocID025974 Rev 1
3/14
14
Electrical characteristics
STE88N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V
(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 1 mA, V
GS
= 0
Min.
650
1
100
±100
3
4
0.024
5
0.029
Typ.
Max.
Unit
V
μA
μA
nA
V
Ω
I
DSS
V
DS
= 650 V
Zero gate voltage
drain current (V
GS
= 0) V
DS
= 650 V, T
C
=125 °C
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 25 V
I
GSS
V
GS(th)
R
DS(on)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250
μA
Static drain-source
on- resistance
V
GS
= 10 V, I
D
= 42 A
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
Test conditions
Min.
-
-
-
Typ.
8825
223
11
Max.
-
-
-
Unit
pF
pF
pF
C
o(tr)
(1)
V
GS
= 0, V
DS
= 0 to 520 V
-
778
-
pF
C
o(er)
(2)
V
GS
= 0, V
DS
= 0 to 520 V
-
202
-
pF
R
G
Q
g
Q
gs
Q
gd
f = 1 MHz open drain
V
DD
= 520 V, I
D
= 42 A,
V
GS
= 10 V
(see
Figure 16)
-
-
-
-
1.79
204
51
84
-
-
-
-
Ω
nC
nC
nC
1. C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
2. C
o(er)
is a constant capacitance value that gives the same stored energy as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
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DocID025974 Rev 1
STE88N65M5
Electrical characteristics
Table 6. Switching times
Symbol
t
d(v)
t
r(v)
t
f(i)
t
c(off)
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
V
DD
= 400 V, I
D
= 56 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 17)
(see
Figure 20)
Test conditions
Min.
-
-
-
-
Typ.
141
16
29
56
Max. Unit
-
-
-
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol
I
SD
I
SDM (1)
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 84 A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150 °C
(see
Figure 17)
I
SD
= 84 A, di/dt = 100 A/μs
V
DD
= 100 V (see
Figure 17)
I
SD
= 88 A, V
GS
= 0
Test conditions
Min.
-
-
-
-
-
-
-
-
-
544
14
50
660
20
60
Typ.
Max. Unit
88
352
1.5
A
A
V
ns
μC
A
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300
μs,
duty cycle 1.5%
DocID025974 Rev 1
5/14
14
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