STGD10NC60SD
STGF10NC60SD
10 A, 600 V fast IGBT
Features
■
■
■
Optimized performance for medium operating
frequencies up to 5 kHz in hard switching
Very soft ultra fast antiparallel diode
TA
Low on-voltage drop (V
CE(sat)
)
B
3
Application
■
3
1
2
1
Motor drive
DPAK
TO-220FP
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
GD10NC60SD
GF10NC60SD
Package
DPAK
TO-220FP
Packaging
Tape and reel
Tube
Order codes
STGD10NC60SDT4
STGF10NC60SD
June 2010
Doc ID 15847 Rev 2
1/16
www.st.com
16
Contents
STGD10NC60SD, STGF10NC60SD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
............................................... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
I
C(1)
I
C(1)
I
CL (2)
I
CP (3)
I
F
I
FSM
V
GE
P
TOT
V
ISO
T
j
1.
Absolute maximum ratings
Value
Parameter
DPAK
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25°C
Continuous collector current at T
C
= 100°C
Turn-off latching current
Pulsed collector current
Diode RMS forward current at T
C
=25 °C
Surge non repetitive forward current t
p
= 10 ms
sinusoidal
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Isolation withstand voltage (RMS) from all three leads
to external heat sink (t = 1 sec; T
C
= 25 °C)
Operating junction temperature
60
18
10
14
25
10
20
±20
25
2500
-55 to 150
TO-220FP
600
10
5
V
A
A
A
A
A
A
V
W
V
°C
Unit
Calculated according to the iterative formula:
T
j
(
max
)
–
T
C
-
I
C
(
T
C
)
= ---------------------------------------------------------------------------------------------------------
R
thj
–
c
×
V
CE
(
sat
) (
max
)
(
T
j
(
max
)
,
I
C
(
T
C
) )
2. V
clamp
= 80%,(V
CES
), T
j
=150 °C, R
G
= 10
Ω,
V
GE
= 15 V.
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Table 3.
Symbol
Thermal data
Value
Parameter
DPAK
Thermal resistance junction-case IGBT
2.08
4.5
100
62.5
TO-220FP
5
°C/W
°C/W
°C/W
Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Doc ID 15847 Rev 2
3/16
Electrical characteristics
STGD10NC60SD, STGF10NC60SD
2
Electrical characteristics
(T
J
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs
Static
Parameter
Test conditions
Min.
600
1.45
1.45
3.75
1.65
5.75
150
1
±100
3.5
Typ.
Max. Unit
V
V
V
V
µA
mA
nA
S
Collector-emitter breakdown
I
C
= 1 mA
voltage (V
GE
= 0)
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
GE
=0)
Gate-emitter leakage
(V
CE
=0)
Forward transconductance
V
GE
= 15 V, I
C
= 5 A
V
GE
= 15 V, I
C
= 5 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 600 V
V
CE
=600 V, T
J
=125 °C
V
GE
= ±20 V
V
CE
= 15 V
,
I
C
= 5 A
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min.
Typ.
365
44
8
18
8
3.5
Max.
Unit
pF
pF
pF
nC
nC
nC
V
CE
= 25 V, f = 1 MHz, V
GE
= 0
-
-
V
CE
= 480 V, I
C
= 5 A,
V
GE
= 15 V
Figure 18
-
-
4/16
Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 390 V, I
C
= 5 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Figure 19
V
CC
= 390 V, I
C
= 5 A
,
R
G
= 10
Ω
V
GE
= 15 V,
T
J
= 125°C
Figure 19
V
cc
= 390 V, I
C
= 5 A,
,
R
G
= 10
Ω
V
GE
= 15 V,
Figure 19
V
cc
= 390 V, I
C
= 5 A,
,
R
G
= 10
Ω
V
GE
= 15 V,
T
J
= 125°C
Figure 19
Min.
Typ.
19
4
1330
18
4.5
1000
100
160
205
165
250
310
Max. Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
-
-
Table 7.
Symbol
E
on (1)
E
off (2)
E
ts
Eon
(1)
E
off(2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 480 V, I
C
= 5 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Figure 17
V
CC
= 480 V, I
C
= 5 A
,
R
G
= 10
Ω
V
GE
= 15 V,
T
J
= 125°C
Figure 17
Min.
Typ.
60
340
400
90
540
630
Max.
Unit
µJ
µJ
µJ
µJ
µJ
µJ
-
-
-
-
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
Figure 17.
If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature.
2. Turn-off losses included also include also the tail of the collector current.
Table 8.
Symbol
V
F
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
=5 A
I
F
=5 A, T
J
=125 °C
I
F
=5 A, V
R
=40 V,
di/dt=100 A/µs
Figure 20
I
F
=5 A, V
R
=40 V,
T
J
=125 °C, di/dt=100 A/µs
Figure 20
Min.
-
Typ.
2
1.65
22
14
1.3
34
35
2.1
Max.
2.45
Unit
V
V
ns
nC
A
ns
nC
A
-
-
Doc ID 15847 Rev 2
5/16
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