d. Maximum under steady state conditions is 90 °C/W (n-channel) and 90 °C/W (p-channel).
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4590DY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= -100 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= -5 V, V
GS
= -10 V
V
GS
= 10 V, I
D
= 2 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= -10 V, I
D
= -2 A
V
GS
= 4.5 V, I
D
= 1.5 A
V
GS
= -4.5 V, I
D
= -1 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
N-Channel
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
C
oss
P-Channel
V
DS
= -50 V, V
GS
= 0 V, f = 1 MHz
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 4.5 A
Total Gate Charge
Q
g
V
DS
= -50 V, V
GS
= -10 V, I
D
= -5 A
N-Channel
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 4.5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= -50 V, V
GS
= -4.5 V, I
D
= -5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
f = 1 MHz
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
3
360
1150
130
65
20
40
7.5
24
4
11.6
1.2
3.8
2
5
3.3
13
-
-
-
-
-
-
11.5
36
6
18
-
-
-
-
6.6
26
nC
pF
g
fs
V
DS
= 15 V, I
D
= 2 A
V
DS
= -15 V, I
D
= -2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
100
-100
-
-
-
-
1.5
-1.5
-
-
-
-
-
-
10
-10
-
-
-
-
-
-
-
-
70
-103
-5.7
4.5
-
-
-
-
-
-
-
-
-
-
0.047
0.150
0.059
0.165
9
9.3
-
-
-
-
-
-
2.5
-2.5
100
-100
1
-1
10
-10
-
-
0.057
0.183
0.072
0.205
-
-
S
A
μA
V
nA
mV/°C
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4590DY
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
N-Ch
N-Channel
V
DD
= 50 V, R
L
= 13.8
I
D
3.6 A, V
GEN
= 10 V, R
g
= 1
P-Channel
V
DD
= -50 V, R
L
= 12.5
I
D
-4 A, V
GEN
= -10 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 50 V, R
L
= 13.8
I
D
3.6 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= -50 V, R
L
= 12.5
I
D
-4 A, V
GEN
= -4.5 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
S
= 3.6 A
I
S
= -4 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
I
F
= 3.6 A, dI/dt = 100 A/μs, T
J
= 25 °C
P-Channel
I
F
= -4 A, dI/dt = -100 A/μs, T
J
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
5
7
11
11
12
65
6
20
32
55
73
80
14
42
12
25
-
-
-
-
0.83
-0.8
30
42
27
93
19
36
11
6
MAX.
10
15
20
20
25
130
15
40
65
110
150
160
30
85
25
50
3
-3.5
30
-20
1.2
-1.2
60
85
55
190
-
-
-
-
ns
V
ns
nC
A
ns
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
F
= 25 °C
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4590DY
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 10 V thru 5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Vishay Siliconix
12
V
GS
= 4 V
6
8
4
T
C
= 25
°C
T
C
= 125
°C
T
C
= - 55
°C
4
V
GS
= 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
2
0
0.0
1.0
2.0
3.0
4.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.12
600
Transfer Characteristics
500
R
DS(on)
- On-Resistance (Ω)
0.09
C - Capacitance (pF)
400
C
iss
V
GS
= 4.5 V
0.06
V
GS
= 10 V
300
C
oss
200
0.03
100
C
rss
0
0
4
8
12
16
20
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
2
4
6
8
10
- 50
- 25
0
I
D
= 2 A
Capacitance
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 4.5 A
V
DS
= 50 V
V
GS
= 10V
6
V
DS
= 25 V
V
GS
= 4.5 V
4
V
DS
= 80 V
2
0
Q
g
- Total
Gate
Charge (nC)
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S14-0146-Rev. A, 27-Jan-14
On-Resistance vs. Junction Temperature
Document Number: 62937
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4590DY
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.15
I
D
= 2 A
0.12
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
Vishay Siliconix
0.09
T
J
= 125
°C
T
J
= 25
°C
1
0.06
0.03
T
J
= 25
°C
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
2.5
30
On-Resistance vs. Gate-to-Source Voltage
2.3
25
2.1
Power (W)
I
D
= 250 μA
- 50
- 25
0
25
50
75
100
125
150
V
GS(th)
(V)
20
1.9
15
1.7
10
1.5
5
1.3
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
I
D(on)
Limited
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
100 μs
1
1 ms
10 ms
0.1
100 ms
1
s
10
s
DC
0.01
T
A
= 25
°C
BVDSS Limited
0.1
0.001
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
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