d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 65 °C/W
S17-0407-Rev. B, 20-Mar-17
Document Number: 63367
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR882ADP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
c
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Drain-source breakdown voltage (transient)
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
Forward transconductance
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
a
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.74
49
54
24
25
60
80
1.1
95
105
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 20 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
1975
748
60
39.5
30.3
19.5
5.7
8.3
61
0.95
11
12
34
9
13
14
32
10
-
-
-
60
45.5
29.5
-
-
92
1.9
22
24
65
18
26
24
60
20
ns
nC
pF
a
a
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D(aval)
= 30 A, t
transient
= 3 μs
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 17 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
MIN.
100
110
-
-
1.2
-
-
-
30
-
-
-
-
TYP.
-
-
67
-5.8
-
-
-
-
-
0.0072
0.0077
0.0092
60
MAX.
-
-
-
-
2.8
± 100
1
10
-
0.0087
0.0094
0.0115
-
UNIT
V
DS(transient)
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
mV/°C
V
nA
μA
A
S
Notes
a. Pulse test; pulse width
300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. T
CASE
= 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0407-Rev. B, 20-Mar-17
Document Number: 63367
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR882ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 4 V
64
I
D
- Drain Current (A)
8
10
Vishay Siliconix
I
D
- Drain Current (A)
48
6
T
C
= 25
°C
32
4
16
V
GS
= 3 V
V
GS
= 2 V
0.0
0.5
1.0
1.5
2.0
2.5
2
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
4
5
0
0
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.011
3100
0.010
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 4.5 V
0.009
2480
C
iss
1860
0.008
V
GS
= 7.5 V
1240
C
oss
620
0.007
V
GS
= 10 V
C
rss
0.006
0
16
32
48
64
80
I
D
- Drain Current (A)
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
I
D
= 20 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
8
2.0
I
D
= 20 A
1.7
V
DS
= 50 V
V
GS
= 10 V
6
V
DS
= 25 V
4
V
DS
= 75 V
1.4
V
GS
= 4.5 V
1.1
2
0.8
0
0
9
18
27
36
45
Q
g
- Total
Gate
Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S17-0407-Rev. B, 20-Mar-17
Document Number: 63367
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR882ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.040
I
D
= 20 A
10
Vishay Siliconix
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 150
°C
0.032
0.024
0.1
0.016
T
J
= 125
°C
0.01
0.008
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
160
V
GS(th)
- Variance (V)
I
D
= 5 mA
- 0.4
I
D
= 250 μA
Power (W)
150
- 0.1
120
80
- 0.7
40
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
Limited
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
1
s
T
C
= 25
°C
Single
Pulse
10
s
BVDSS Limited
DC
0.1
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S17-0407-Rev. B, 20-Mar-17
Document Number: 63367
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR882ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
Vishay Siliconix
64
I
D
- Drain Current (A)
Package Limited
48
32
16
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
100
2.5
80
2.0
Power (W)
40
Power (W)
60
1.5
1.0
20
0.5
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-0407-Rev. B, 20-Mar-17
Document Number: 63367
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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