STPS20SM100S
Power Schottky rectifier
Datasheet - production data
A(1)
K(2)
A(3)
K
Description
This single Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB and I²PAK, this device is
intended to be used in notebook, game station
and desktop adaptors, providing in these
applications a good efficiency at both low and
high load.
Table 1: Device summary
K
K
A
A
K
A
A
TO-220AB
I²PAK
Symbol
I
F(AV)
V
RRM
Value
20 A
100 V
150 °C
0.63 V
Features
High current capability
Avalanche rated
Low forward voltage drop current
High frequency operation
T
j
(max.)
V
F
(typ.)
Figure 1: Electrical characteristics
V
ARM
and I
ARM
must respect the reverse safe
operating area defined in Figure 9. V
AR
and
I
AR
are pulse measurements (t
p
< 1 μs). V
R
,
I
R
, V
RRM
and V
F
, are static characteristics.
May 2017
DocID15524 Rev 3
1/11
www.st.com
This is information on a product in full production.
Characteristics
STPS20SM100S
1
Characteristics
Table 2: Absolute ratings (limiting values, with terminals 1 and 3 short circuited, at 25 °C,
unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
(1)
V
ARM
(2)
V
ASM
(2)
T
stg
T
j
Notes:
(1)
For
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ = 0.5, square wave
Surge non repetitive
forward current
Repetitive peak
avalanche power
Maximum repetitive peak
avalanche voltage
Maximum single pulse
peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
(3)
T
C
= 125 °C
t
p
= 10 ms sinusoidal
t
p
= 10 µs, T
j
= 125 °C
Value
100
30
20
350
1080
Unit
V
A
A
A
W
t
p
< 1 μs, T
j
< 150 °C, I
AR
< 37.5 A
120
V
-65 to +150
150
°C
°C
pulse time duration deratings, please refer to figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
(2)
See
(3)
Figure 9
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
R
th(j-c)
Junction to case
Parameter
Max. value
1.3
Unit
°C/W
2/11
DocID15524 Rev 3
STPS20SM100S
Symbol
Parameter
Test conditions
T
j
= 25 °C
I
R
(1)
Reverse leakage current
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
F
(2)
Forward voltage drop
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Notes:
(1)
Pulse
(2)
Pulse
Characteristics
Table 4: Static electrical characteristics (with terminals 1 and 3 short circuited)
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
10
10
5
5
565
480
685
560
800
630
620
900
700
mV
Max.
30
30
Unit
µA
mA
µA
mA
V
R
= V
RRM
V
R
= 70 V
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
test: t
p
= 5 ms, δ < 2%
test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.6 x I
F(AV)
+ 0.005 x I
F2(RMS)
DocID15524 Rev 3
3/11
Characteristics
STPS20SM100S
1.1
Characteristics (curves)
Figure 2: Average forward power dissipation
versus average forward current
22
20
Figure 3: Average forward current versus ambient
temperature (δ = 0.5)
22
PF(AV)(W)
δ= 1
δ = 0.5
IF(AV) (A)
R
th(j-a)
= R
th(j-c)
20
18
16
18
16
14
12
δ = 0.1
δ = 0.2
14
12
10
8
δ = 0.05
10
8
T
IF(AV) (A)
δ = tp/T
18
20
22
24
6
4
tp
26
28
T
δ =tp/T
tp
R
th(j-a)
= 15°C/W
6
4
2
2
0
T
amb
(°C)
50
75
100
125
150
0
0
2
4
6
8
10
12
14
16
0
25
Figure 4: Normalized avalanche power derating
versus pulse duration (T
j
= 125 °C)
1
P
ARM
(t p )
P
ARM
(10 µs)
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
1.0
0.9
0.8
Zth(j-c) /Rth(j-c)
TO -220AB/I²PAK
0.1
0.7
0.6
0.5
0.4
0.01
0.3
Single pulse
T
0.2
t
p
(µs)
0.1
0.0
1.E-03
tp(s)
δ =tp/T
1.E-01
tp
1.E+00
0.001
1
10
100
1000
1.E-02
Figure 6: Reverse leakage current versus reverse
voltage applied (typical values)
1.E+02
Figure 7: Junction capacitance versus reverse
voltage applied (typical values)
10000
IR(mA)
T
j
= 150 °C
C(pF)
F = 1 MHz
V
OSC
=30mV
RMS
T
j
= 25 °C
1.E+01
T
j
= 125 °C
1.E+00
T
j
= 100 °C
1000
T
j
= 75 °C
1.E-01
T
j
= 50 °C
1.E-02
T
j
= 25 °C
VR(V)
1.E-03
0
10
20
30
40
50
60
70
80
90
100
VR(V)
100
1
10
100
4/11
DocID15524 Rev 3
STPS20SM100S
Figure 8: Forward voltage drop versus forward
current (terminals 1 and 3 short circuited)
Characteristics
Figure 9: Reverse safe operating area
(t
p
< 1 µs and T
j
< 150 °C)
46
44
Iarm (A)
42
40
38
36
34
32
30
28
100
110
120
Forbidden area
Operating area
Varm (V)
130
140
150
DocID15524 Rev 3
5/11