STB300NH02L
STP300NH02L
N-channel 24V - 120A - TO-220 / D
2
PAK
STripFET™ Power MOSFET
Preliminary Data
Features
Type
STB300NH02L
STP300NH02L
■
■
■
■
V
DSS
24V
24V
R
DS(on)
Max
< 1.8mΩ
< 2.2mΩ
I
D
120A
120A
R
DS(on)
*Q
g
industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low profile, very low parasitic inductance
TO-220
1
2
3
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for high current OR-ing
application.
Applications
■
Switching application
– Specifically designed and optimized for
high efficiency DC/DC converters
– OR-ing
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Figure 1.
so
b
t
le
P
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ro
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D²PAK
s)
t(
3
1
Internal schematic diagram
Table 1.
Device summary
Marking
P300NH02L
B300NH02L
Package
TO-220
D²PAK
Packaging
Tube
Tape & reel
Order codes
STP300NH02L
STB300NH02L
September 2007
Rev 2
1/14
www.st.com
14
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Contents
STB300NH02L - STP300NH02L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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2/14
STB300NH02L - STP300NH02L
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
DS
V
GS
I
D (1)
I
D (1)
I
DM (2)
P
TOT (3)
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
24
± 20
120
120
480
300
Unit
V
V
A
A
T
j
Operating junction temperature
1. This value is silicon limited
2. Pulse width limited by safe operating area
3. This value is rated according Rthj-case
Table 3.
Symbol
Rthj-case
Rthj-amb
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Table 4.
bs
O
et
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P
e
Symbol
I
AV
E
AS (1)
Avalanche characteristics
Parameter
Max value
60
1.6
Unit
A
J
uc
d
s)
t(
O
-
so
b
te
le
r
P
-55 to 175
d
o
2
ct
u
s)
(
A
W
W/°C
°C
Value
0.5
62.5
Unit
°C/W
°C/W
Not-repetitive avalanche current
(pulse width limited by Tj max)
Single pulse avalanche energy
1. Starting Tj = 25°C, I
D
= I
AV
, V
DD
= 20V
3/14
Electrical characteristics
STB300NH02L - STP300NH02L
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Static drain-source on
resistance
Test conditions
I
D
= 1mA, V
GS
= 0
V
DS
= 20V,
V
DS
= 20V, T
c
=125°C
V
DS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 80A
V
GS
= 10V, I
D
= 80A
@100°C
Min.
24
1
10
Typ.
Max.
Unit
V
µA
µA
nA
V
mΩ
mΩ
mΩ
mΩ
Table 6.
Symbol
C
iss
C
oss
C
rss
Q
g
Dynamic
Parameter
bs
O
et
l
o
ro
P
e
Q
gs
Q
gd
R
G
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
uc
d
s)
t(
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-
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b
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le
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e
TO-220
D²PAK
TO-220
D²PAK
ro
Min.
1
uc
d
1.8
1.4
2.7
2.1
±100
2
2.2
1.8
s)
t(
Test conditions
Typ.
7055
3251
307
109.4
30.2
26.4
Max.
Unit
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 15V, f = 1 MHz, V
GS
=0
V
DD
= 12V,I
D
= 120A,
V
GS
= 10V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
Gate input resistance
4.4
4/14
STB300NH02L - STP300NH02L
Electrical characteristics
Table 7.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Test conditions
V
DD
= 10V, I
D
= 60A
,
R
G
= 4.7Ω V
GS
= 10V,
(see Figure 13)
V
DD
= 10V, I
D
= 60A
,
R
G
= 4.7Ω V
GS
= 10V,
(see Figure 13)
Min.
Typ.
18
275
Max.
Unit
ns
ns
Turn-off delay time
Fall time
138
94.4
ns
ns
Table 8.
Symbol
I
SD
I
SD
V
SD (1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 120 A, V
GS
= 0
Test conditions
Min
I
SD
= 120A, V
DD
= 20V,
di/dt = 100A/µs
T
j
= 25°C
(see Figure 18)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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I
SD
=120A, V
DD
= 20V
di/dt = 100A/µs
T
j
= 150°C
(see Figure 18)
so
b
te
le
ro
P
uc
d
63
85
2.7
63.2
88
2.8
Typ.
Max
120
640
1.3
s)
t(
Unit
A
A
V
ns
nC
A
ns
nC
A
5/14
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