RE1C001ZP
Pch -20V -100mA Small Signal MOSFET
Datasheet
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Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
-20V
3.8Ω
±100mA
150mW
SOT-416FL
SC-89
EMT3F
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Inner circuit
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Features
1) Low voltage drive(1.2V) makes this device
ideal for partable equipment.
2) Drive circuits can be simple.
3) Built-in G-S Protection Diode.
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Packaging specifications
Packing
Reel size (mm)
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Application
Embossed
Tape
180
8
3000
TL
RX
Unit
V
mA
mA
V
mW
℃
℃
Type
Switching
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Value
-20
±100
±400
±10
150
150
-55 to +150
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
T
j
T
stg
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© 2016 ROHM Co., Ltd. All rights reserved.
1/10
20160727 - Rev.001
RE1C001ZP
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
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Electrical characteristics (T
a
= 25°C)
Symbol
R
thJA*2
Values
Min.
-
Typ.
-
Max.
833
Unit
℃
/W
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Symbol
Conditions
Values
Min.
-20
-
-
-
-0.3
-
-
-
-
-
-
-
120
Typ.
-
-21.9
-
-
-
2.4
2.5
3.4
4.8
6.0
10.0
4.8
-
Max.
-
-
-1
±10
-1.0
-
3.8
5.1
8.2
13.2
40.0
6.8
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
Δ
V
(BR)DSS
I
D
= -1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= -20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= -10V, I
D
= -100μA
Δ
V
GS(th)
I
D
= -1mA
ΔT
j
referenced to 25
℃
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -2.5V, I
D
= -50mA
V
GS
= -1.8V, I
D
= -20mA
Static drain - source
on - state resistance
R
DS(on)*3
V
GS
= -1.5V, I
D
= -10mA
V
GS
= -1.2V, I
D
= -1mA
V
GS
= -4.5V, I
D
= -100mA
T
j
= 125
℃
Forward Transfer
Admittance
|Y
fs
|
*3
V
DS
= -10V, I
D
= -100mA
Ω
mS
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Each terminal mounted on a reference land.
*3 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved.
2/10
20160727 - Rev.001
RE1C001ZP
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*3
t
r*3
t
d(off)*3
t
f*3
Conditions
Min.
V
GS
= 0V
V
DS
= -10V
f = 1MHz
V
DD
⋍
-10V,V
GS
= -4.5V
Unit
Typ.
15.0
4.0
1.5
46
62
325
137
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= -50mA
R
L
⋍
200Ω
R
G
= 10Ω
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*3
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= -100mA
-
-
-
Typ.
-
-
-
Max.
-100
-400
-1.2
mA
mA
V
Unit
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© 2016 ROHM Co., Ltd. All rights reserved.
3/10
20160727 - Rev.001
RE1C001ZP
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Drain Current Derating Curve
Fig.3 Typical Output Characteristics(I)
Fig.4 Typical Output Characteristics(II)
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© 2016 ROHM Co., Ltd. All rights reserved.
4/10
20160727 - Rev.001
RE1C001ZP
Datasheet
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Electrical characteristic curves
Fig.5 Breakdown Voltage vs.
Junction Temperature
Fig.6 Typical Transfer Characteristics
Fig.7 Gate Threshold Voltage vs.
Junction Temperature
Fig.8 Forward Transfer Admittance vs.
Drain Current
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© 2016 ROHM Co., Ltd. All rights reserved.
5/10
20160727 - Rev.001
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