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MJE2955TG

产品描述Bipolar Transistors - BJT 10A 60V 125W PNP
产品类别分立半导体    晶体管   
文件大小58KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJE2955TG概述

Bipolar Transistors - BJT 10A 60V 125W PNP

MJE2955TG规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
零件包装代码TO-220AB
包装说明LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
针数3
制造商包装代码221A-09
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
外壳连接COLLECTOR
最大集电极电流 (IC)10 A
集电极-发射极最大电压60 V
配置SINGLE
最小直流电流增益 (hFE)5
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)75 W
认证状态Not Qualified
表面贴装NO
端子面层Matte Tin (Sn) - annealed
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)2 MHz
Base Number Matches1

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MJE2955T (PNP),
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
www.onsemi.com
High Current Gain − Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
(Note 1)
T
J
, T
stg
Value
60
70
5.0
10
6.0
75
0.6
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
4
W
W/°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
TO−220
CASE 221A−09
STYLE 1
1
2
3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.67
Unit
°C/W
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MARKING DIAGRAM
MJExx55TG
AY WW
ORDERING INFORMATION
Device
MJE2955TG
MJE3055TG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 12
Publication Order Number:
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