STTH20004TV1
Ultrafast high voltage rectifier
Datasheet
-
production data
Features
•
Ultrafast switching
K1
A1
•
Low reverse current
•
Low thermal resistance
•
Reduces switching and conduction losses
•
Insulated package:
– Electrical insulation = 2500 V rms
– Capacitance = 189 pF
K2
A2
ISOTOP
STTH20004TV1
•
ECOPACK
®
2 compliant component
Description
The STTH20004TV1 uses ST new 400 V
technology and is specially suited for use in
switching power supplies, welding equipment,
and industrial applications, as an output
rectification diode.
Table 1. Device summary
Symbol
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
t
rr
(max)
Value
Up to 2 x 120 A
400 V
150 °C
0.83 V
60 ns
June 2014
This is information on a product in full production.
DocID11819 Rev 3
1/9
www.st.com
9
Characteristics
STTH20004TV1
1
Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ
= 0.5
Parameter
Value
400
200
Unit
V
A
A
T
c
= 75 °C
T
c
= 55 °C
t
p
= 10 ms Sinusoidal
Per diode
Per diode
100
120
900
-55 to + 150
150
A
°C
°C
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Table 3. Thermal parameter
Symbol
R
th(j-c)
R
th(c)
Junction to case
Total
Coupling
0.35
0.10
°C/W
Parameter
Per diode
Maximum
0.60
Unit
When the diodes 1 and 2 are used simultaneously:
Δ
T
j (diode1)
= P
(diode1)
x R
th(j-c) (per diode)
+ P
(diode2)
x R
th(c)
Table 4.
Symbol
I
R(1)
V
F(2)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
Forward voltage drop
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
Typ.
Max.
100
µA
100
1000
1.2
I
F
= 100 A
V
0.83
1.0
Unit
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 380 µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.8 x I
F(AV)
+ 0.002 I
F2(RMS)
2/9
DocID11819 Rev 3
STTH20004TV1
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
I
F
= 1 A,
dI
F
/dt = 50 A/µs,
V
R
= 30 V
I
F
= 1 A,
dI
F
/dt = 200 A/µs,
V
R
= 30 V
I
F
= 100 A,
dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
I
F
= 100 A,
dI
F
/dt = 100 A/µs,
V
R
= 200 V
Min.
Typ.
75
Characteristics
Max.
100
Unit
t
rr
Reverse recovery time
T
j
= 25 °C
ns
45
60
800
2.6
18
0.4
ns
V
A
-
t
fr
V
FP
I
RM
S
factor
Forward recovery time
Forward recovery voltage
Reverse recovery current
T
j
= 125 °C
T
j
= 25 °C
Figure 1. Conduction losses versus average
forward current (per diode)
P(W)
180
160
140
120
100
δ=0.05
δ=0.1
δ=0.5
δ=0.2
δ=1
Figure 2. Forward voltage drop versus forward
current (per diode)
200
180
160
140
120
100
T
j
=150°C
(Maximum values)
I
FM (A)
80
80
60
40
20
0
0
10
20
30
40
50
60
T
T
j
=150°C
(Typical values)
60
40
T
j
=25°C
(Maximum values)
I F(AV) (A)
70
80
δ
=tp/T
tp
20
0
0.0
VFM (V)
0.2
0.4
0.6
0.8
1.0
90 100 110 120 130 140 150
1.2
1.4
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
Zth(j-c) /Rth( j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
Single pulse
Figure 4. Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
IRM (A)
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
50
45
40
35
30
25
20
15
10
t P (s)
1.E-02
1.E-01
1.E+00
1.E+01
5
0
0
50
100
150
dIF/dt(A/µs)
200
250
300
350
400
450
500
DocID11819 Rev 3
3/9
Characteristics
STTH20004TV1
Figure 5. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
t
rr
(ns)
300
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
Q
rr
(nC)
3500
3000
2500
2000
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
250
200
150
1500
100
1000
50
500
0
0
50
100
150
dIF/dt(A/µs)
200
250
300
350
400
450
500
0
0
50
100
150
dIF/dt(A/µs)
200
250
300
350
400
450
500
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
50
100
150
Figure 8. Relative variations of dynamic
parameters versus junction temperature
1.6
S
FACTOR
S FACTOR
I
F
< 2 x I
F(AV)
V
R
=200V
T
j
=125°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
RM
Q
RR
t
RR
dIF/dt(A/µs)
200
250
300
350
400
450
500
Tj (°C)
50
75
I
F
=I
F(AV)
V
R
=200V
Reference: T
j
=125°C
0.0
25
100
125
Figure 9. Transient peak forward voltage versus Figure 10. Forward recovery time versus dI
F
/dt
dI
F
/dt (typical values, per diode)
(typical values, per diode)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
50
100
150
200
250
300
350
400
450
500
VFP (V)
I
F
=I
F(AV)
T
j
=125°C
t
fr
(ns)
1800
1600
1400
1200
1000
800
600
400
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
dIF/dt(A/µs)
200
0
0
50
100
150
dIF /dt(A/µs)
200
250
300
350
400
450
500
4/9
DocID11819 Rev 3
STTH20004TV1
Characteristics
Figure 11. Reverse recovery time versus dI
F
/dt (typical values, per diode)
C(pF)
10000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
1000
VR(V)
100
1
10
100
1000
DocID11819 Rev 3
5/9
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