VS-82CNQ030APbF Series
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Vishay Semiconductors
Schottky High Performance Rectifier
Gen 3, D-61 Package, 2 x 40 A
VS-82CNQ030APbF
Base
common
cathode
FEATURES
• 150 °C T
J
operation
• Dual center tap module
• Very low forward voltage drop
1
Anode
1
2
Common
cathode
3
Anode
2
Available
Available
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
D-61-8
VS-82CNQ030ASMPbF
1
Anode
1
2
Common
cathode
3
Anode
2
• New fully transfer-mould low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
D-61-8-SM
VS-82CNQ030ASLPbF
Base
common
cathode
1
D-61-8-SL
Anode
1
3
Anode
2
DESCRIPTION
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-61
2 x 40 A
30 V
0.47
280 mA at 125 °C
150 °C
Common cathode
36 mJ
The center tap Schottky rectifier module series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
40 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
80
30
5100
0.37
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-82CNQ030APbF
30
UNITS
V
Revision: 05-Aug-14
Document Number: 94258
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 119 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
VALUES
80
5100
880
36
8
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 8 A, L = 1.12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
40 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
80 A
40 A
80 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.47
0.55
0.37
0.47
5
280
3700
5.5
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style D-61
Marking device
Case style D-61-8-SM
Case style D-61-8-SL
per leg
per package
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation (see fig. 4)
DC operation
Mounting surface, smooth and greased
Device flatness < 5 mils
TEST CONDITIONS
VALUES
-55 to +150
0.85
0.42
0.30
7.8
0.28
40 (35)
58 (50)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
82CNQ030A
82CNQ030ASM
82CNQ030ASL
Revision: 05-Aug-14
Document Number: 94258
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-82CNQ030APbF Series
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Vishay Semiconductors
1000
1000
T
J
= 150 °C
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
100
100
T
J
= 125 °C
10
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
1
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1
0.1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t
1
t
2
Single pulse
(thermal resistance)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 05-Aug-14
Document Number: 94258
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-82CNQ030APbF Series
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Vishay Semiconductors
25
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
Allowable Case Temperature (°C)
150
R
thJC
(DC) = 0.85 °C/W
Average Power Loss (W)
145
20
140
15
135
DC
10
DC
130
5
125
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 05-Aug-14
Document Number: 94258
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-82CNQ030APbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
82
2
C
3
N
4
Q
5
030
6
A
7
PbF
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (80 A)
Circuit configuration:
C = common cathode
Package:
N = D-61
Schottky “Q” series
Voltage ratings (030 = 30 V)
Package style:
A = D-61-8
ASM = D-61-8-SM
ASL = D-61-8-SL
2
3
4
5
6
7
8
-
None = standard production
PbF = lead (Pb)-free
Standard pack quantity: A = 10 pieces; ASM/ASL = 20 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95354
www.vishay.com/doc?95356
Revision: 05-Aug-14
Document Number: 94258
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000