75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
75 A, 40 V, 0.0055 ohm, N沟道, 硅, POWER, 场效应管, TO-220AB
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | International Rectifier ( Infineon ) |
零件包装代码 | TO-220AB |
包装说明 | LEAD FREE, PLASTIC PACKAGE-3 |
针数 | 3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
Is Samacsys | N |
其他特性 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas) | 220 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 40 V |
最大漏极电流 (Abs) (ID) | 75 A |
最大漏极电流 (ID) | 75 A |
最大漏源导通电阻 | 0.0055 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 175 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | 250 |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 140 W |
最大脉冲漏极电流 (IDM) | 470 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Matte Tin (Sn) - with Nickel (Ni) barrie |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | 30 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
IRF4104PBF | IRF4104LPBF | IRF4104SPBF | |
---|---|---|---|
描述 | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
是否Rohs认证 | 符合 | 符合 | 符合 |
厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
零件包装代码 | TO-220AB | TO-262AA | D2PAK |
包装说明 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC, TO-262, 3 PIN | LEAD FREE, PLASTIC, D2PAK-3 |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknow | _compli | not_compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 |
其他特性 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas) | 220 mJ | 220 mJ | 220 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 40 V | 40 V | 40 V |
最大漏极电流 (Abs) (ID) | 75 A | 120 A | 120 A |
最大漏极电流 (ID) | 75 A | 75 A | 75 A |
最大漏源导通电阻 | 0.0055 Ω | 0.0055 Ω | 0.0055 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-262AA | TO-263AB |
JESD-30 代码 | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 |
JESD-609代码 | e3 | e3 | e3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | IN-LINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 250 | 260 | 260 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 140 W | 140 W | 140 W |
最大脉冲漏极电流 (IDM) | 470 A | 470 A | 470 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | YES |
端子面层 | Matte Tin (Sn) - with Nickel (Ni) barrie | Matte Tin (Sn) - with Nickel (Ni) barrie | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 |
是否无铅 | 不含铅 | - | 不含铅 |
Is Samacsys | N | N | - |
湿度敏感等级 | - | 1 | 1 |
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