HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Typical Applications
The HMC329 is ideal for:
• LMDS
Features
Passive: No DC Bias Required
Input IP3: +19 dBm
LO/RF Isolation: 42 dB
Small Size: 0.85 x 0.55 x 0.1 mm
3
MIXERS - CHIP
• Microwave Point-to-Point Radios
• SATCOM
Functional Diagram
General Description
The HMC329 chip is a miniature passive double
balanced mixer which can be used as an upconverter
or downconverter from 25-40 GHz in a small chip
area of 0.85 x 0.55 mm. Excellent isolations are
provided by on-chip baluns, and the chip requires no
external components and no DC bias. Measurements
were made with the chip mounted and ribbon bonded
into in a 50-ohm microstrip test fixture that contains
5-mil alumina substrates between the chip and
K-connectors. Measured data includes the parasitic
effects of the assembly. RF connections to the chip
were made with 0.076 mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
Electrical Specifi cations,
T
A
= +25° C
LO = +13 dBm, IF = 1 GHz
Parameter
Min.
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Compression (Input)
* Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
38
25
21
16
45
8
Typ.
25 - 40
DC - 8
9.5
9.5
42
35
28
19
55
11
11.5
11.5
Max.
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Units
3 - 52
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Conversion Gain vs.
Temperature @ LO = +13 dBm
0
Isolation @ LO = +13 dBm
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
LO / RF
RF / IF
LO / IF
CONVERSION GAIN (dB)
-4
-8
3
MIXERS - CHIP
-12
+ 25 C
+ 85 C
- 55 C
-16
-20
22
24
26
28
30
32
34
36
38
40
42
FREQUENCY (GHz)
22
24
26
28
30
32
34
36
38
40
42
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
0
+ 7 dBm
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
Upconverter Performance
Conversion Gain @ LO = +13 dBm
0
CONVERSION GAIN (dB)
-8
CONVERSION GAIN (dB)
38
40
42
-4
-4
-8
-12
-12
-16
-16
-20
22
24
26
28
30
32
34
36
FREQUENCY (GHz)
-20
22
24
26
28
30
32
34
36
38
40
FREQUENCY (GHz)
IF Bandwidth @ LO = +13 dBm
0
-4
RESPONSE (dB)
-8
-12
IF Return Loss
-16
Conversion Gain
-20
0
1
2
3
4
5
6
7
8
9
10
11
12
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 53
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Input IP3 vs.
Temperature @ LO = +13 dBm *
25
Input IP3 vs. LO Drive *
25
20
20
IP3 (dBm)
15
+ 11 dBm
+ 13 dBm
+ 15 dBm
IP3 (dBm)
3
MIXERS - CHIP
15
+ 25 C
+ 85 C
- 55 C
10
10
5
5
0
26
28
30
32
34
36
38
40
FREQUENCY (GHz)
0
26
28
30
32
34
36
38
40
FREQUENCY (GHz)
Input IP2 vs. LO Drive *
70
65
60
IP2 (dBm)
55
50
45
40
26
28
30
32
34
36
38
40
FREQUENCY (GHz)
+ 11 dBm
+ 13 dBm
+ 15 dBm
Input IP2 vs.
Temperature @ LO = +13 dBm *
70
65
60
IP2 (dBm)
55
50
45
40
26
28
30
32
34
36
38
40
FREQUENCY (GHz)
+ 25 C
+ 85 C
- 55 C
MxN Spurious Outputs
as a Down Converter
nLO
mRF
0
1
2
3
4
RF = 31 GHz @ -10 dBm
LO = 32 GHz @ +13 dBm
All values in dBc below IF output power level.
0
xx
19
1
7
2
3
4
Input P1dB vs.
Temperature @ LO = +13 dBm
15
13
P1dB (dBm)
0
69
41
57
74
67
69
74
71
74
11
9
+ 25 C
+ 85 C
- 55 C
7
5
26
28
30
32
34
36
38
40
FREQUENCY (GHz)
* Two-tone input power = -5 dBm each tone, 1 MHz spacing.
3 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Absolute Maximum Ratings
RF / IF Input
LO Drive
IF DC Current
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+13 dBm
+27 dBm
±2 mA
-65 to +150 °C
-55 to +85 °C
Class 1B
3
MIXERS - CHIP
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-5
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 55
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
0.076mm
(0.003”)
3
MIXERS - CHIP
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is
recommended to minimize inductance on RF, LO & IF ports.
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage:
All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
3 - 56
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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