HMC322
v00.0303
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
Typical Applications
The HMC322 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
Features
Broadband Performance: DC - 10.0 GHz
High Isolation: >38 dB@ 4 GHz
Low Insertion Loss: 2.0 dB@ 4 GHz
Integrated 3:8 TTL Decoder
Small Size: 1.45 mm x 1.6 mm x 0.10 mm
4
SWITCHES - CHIP
• Test Instrumentation
Functional Diagram
General Description
The HMC322 is a broadband non-reflective GaAs
MESFET SP8T switch chip. Covering DC to 10 GHz,
this switch offers high isolation and low insertion
loss and extends the frequency coverage of Hittite’s
SP8T switch product line. This switch also includes
an on board binary decoder circuit which reduces
the required logic control lines to three. The switch
operates using a negative control voltage of 0/-5V,
and requires a fixed bias of -5V. All data is tested with
the chip in a 50 Ohm test fixture connected via 0.025
mm (1 mil) diameter wire bonds of 0.5 mm (20 mils)
length.
Electrical Specifications,
T
A
= +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Parameter
Frequency
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 10.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 10.0 GHz
“On State”
“Off State”
DC - 10.0 GHz
DC - 10.0 GHz
0.5 - 10.0 GHz
0.5 - 10.0 GHz
19
34
40
32
27
20
18
Min.
Typ.
1.9
2.0
2.1
2.2
2.4
46
38
32
26
24
14
11
23
38
50
150
Max.
2.3
2.4
2.5
2.6
2.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
Insertion Loss
Isolation (RFC to RF1 - 8)
Return Loss
Return Loss
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 10.0 GHz
4 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC322
v00.0303
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
Insertion Loss vs. Temperature
0
Isolation Between RFC and Output Ports
0
-10
RF1
RF2
RF3
RF4
RF5
RF6
RF7
RF8
INSERTION LOSS (dB)
-1
ISOLATION (dB)
-20
-30
-40
-50
-4
+25 C
+85 C
-55 C
-2
-3
4
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
-60
-70
-5
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Return Loss
0
RFC
RF1-8 ON
RF1-8 OFF
Isolation Between Output Ports
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-5
RETURN LOSS (dB)
-10
-15
-20
-60
-25
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
-70
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
0.1 and 1 dB Input Compression Point
INPUT COMPRESSION POINT (dBm)
28
Input Third Order Intercept Point
INPUT THIRD ORDER INTERCEPT (dBm)
50
26
45
24
40
22
35
+25 C
+85 C
-55 C
20
1.0 Compression Point
0.1dB Compression Point
30
18
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
25
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 15
SWITCHES - CHIP
HMC322
v00.0303
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
Control Voltages
State
Low
High
Bias Condition
-3V to 0 Vdc @ 25 uA Typical
-5 to -4.2 Vdc @ 5 uA Typical
Absolute Maximum Ratings
Bias Voltage Range (Vee)
Control Voltage Range
(A, B, & C)
Storage Temperature
Operating Temperature
-7.0 Vdc
Vee -0.5V to +1.0 Vdc
-65 to +150 °C
-40 to +85 °C
+26 dBm
4
SWITCHES - CHIP
RF Input Power, 0.5 - 10 GHz
Truth Table
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Control Input
A
High
Low
High
B
High
High
Low
Low
High
High
Low
Low
C
High
High
High
High
Low
Low
Low
Low
Signal Path State
RFCOM to:
RF1
RF2
RF3
RF4
RF5
RF6
RF7
RF8
Bias Voltage & Current
Vee Range = -5.0 Vdc ± 10%
Vee
(Vdc)
-5.0
Iee (Typ.)
(mA)
5.0
Iee (Max.)
(mA)
9.0
Low
High
Low
High
Low
4 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC322
v00.0303
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
Outline Drawing
4
SWITCHES - CHIP
Die Packaging Information
[1]
Standard
WP-3
Alternate
[2]
NOTES:
1. DIMENSIONS IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS 0.004”.
3. TYPICAL BOND PAD IS 0.004” SQUARE.
4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED GROUND BOND PADS.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 17
HMC322
v00.0303
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
Pad Descriptions
Pad Number
1 - 7,
12 - 14
Function
RF1, RFC,
RF8 - RF2
Description
These pads are DC coupled and matched to 50 Ohms. Block-
ing capacitors are required if RF line potential is not equal to
0V.
Interface Schematic
4
SWITCHES - CHIP
8
A
See truth table and control voltage table.
9
B
See truth table and control voltage table.
10
C
See truth table and control voltage table.
11
Vee
Supply Voltage = -5Vdc ± 10%
Die Bottom
GND
Die bottom must be connected to RF / DC ground.
TTL Interface Circuit
(Required for Each Control Input A, B and C)
Note:
Control inputs A, B, and C can be driven directly with TTL
logic with -5 Volts applied to the HCT logic gates Vee pin
and to the Vee pad of the RF Switch.
4 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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