Si6969DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 12
r
DS(on)
(W)
0.034 @ V
GS
= - 4.5 V
0.050 @ V
GS
= - 2.5 V
0.075 @ V
GS
= - 1.8 V
I
D
(A)
"4.6
"3.8
"3.0
S
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
D
1
D
2
D
8 D
2
7 S
2
6 S
2
5 G
2
G
1
G
2
Si6969DQ
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
- 12
"8
"4.6
"3.8
"30
- 1.25
1.1
0.72
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
Document Number: 70828
S-59527—Rev. A, 19-Oct-98
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t
v
10 sec
Steady State
R
thJA
115
Symbol
Typical
Maximum
110
Unit
_C/W
2-1
Si6969DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= - 9.6 V, V
GS
= 0 V
V
DS
= - 9.6 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
- 8 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 4.6 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 2.5 V, I
D
= - 3.8 A
V
GS
= - 1.8 V, I
D
= - 3.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= - 8 V, I
D
= - 4.6 A
I
S
= - 1.25 A, V
GS
= 0 V
- 30
0.027
0.037
0.053
18
- 0.68
- 1.1
0.034
0.050
0.075
S
V
W
- 0.45
"100
-1
- 25
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.25 A, di/dt = 100 A/ms
V
DD
= - 6 V, R
L
= 6
W
I
D
^
- 1 A, V
GEN
= - 4.5 V, R
G
= 6
W
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 4.6 A
21
4.5
3.5
25
35
80
40
50
50
60
150
80
100
ns
40
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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2-2
Document Number: 70828
S-59527—Rev. A, 19-Oct-98
Si6969DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2,5 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
25_C
30
T
C
= - 55_C
Transfer Characteristics
18
2V
18
125_C
12
12
6
1.5 V
6
1V
0
0
2
4
6
8
10
12
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
V
GS
= 1.8 V
r
DS(on)
- On-Resistance (
W
)
0.08
C - Capacitance (pF)
3200
4000
Capacitance
C
iss
0.06
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
0.02
2400
1600
800
C
rss
0
2
4
C
oss
0.00
0
6
12
18
24
30
0
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
4.5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 4.6 A
1.4
On-Resistance vs. Junction Temperature
r
DS(on)
- On-Resistance (
W)
(Normalized)
3.6
V
GS
= 4.5 V
I
D
= 4.6 A
1.2
2.7
1.0
1.8
0.8
0.9
0.0
0
3
6
9
12
15
18
21
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 70828
S-59527—Rev. A, 19-Oct-98
www.vishay.com
2-3
Si6969DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
0.08
0.07
T
J
= 150_C
I
S
- Source Current (A)
10
r
DS(on)
- On-Resistance (
W
)
0.06
0.05
I
D
= 4.6 A
0.04
0.03
0.02
0.01
1
0.00
0.2
0.4
0.6
0.8
1..0
1.2
1.4
0.00
0
2
4
6
8
On-Resistance vs. Gate-to-Source Voltage
T
J
= 25_C
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.5
0.4
0.3
20
0.2
0.1
0.0
- 0.1
- 0.2
- 50
5
Power (W)
I
D
= 250
mA
30
25
Single Pulse Power
V
GS(th)
Variance (V)
15
10
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
30
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
2. Per Unit Base = R
thJA
= 115_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
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2-4
Document Number: 70828
S-59527—Rev. A, 19-Oct-98
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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