HMC308
/
308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Features
Gain: 18 dB
P1dB Output Power: +17 dBm@ +5V
Single Supply: +3V or +5V
No External Components
Integrated DC Blocks
Ultra Small Package: SOT26
Typical Applications
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Broadband or Narrow Band Applications:
• Cellular/PCS/3G
• Fixed Wireless & Telematics
• Cable Modem Termination Systems
• WLAN, Bluetooth & RFID
Functional Diagram
General Description
The HMC308 & HMC308E are low cost MESFET
MMIC amplifiers that operate from a single +3 to
+5V supply from 0.8 to 3.8 GHz. The surface mount
SOT26 amplifier can be used as a broadband ampli-
fier stage or used with external matching for opti-
mized narrow band applications. With Vdd biased at
+5V, the HMC308 & HMC308E offers 18 dB of gain
and +20 dBm of saturated output power while requir-
ing only 53 mA of current. This amplifier is ideal as
a driver amplifier for transmitters or for use as a
local oscillator (LO) amplifier to increase drive levels
for passive mixers. The amplifier occupies 0.014 in
2
(9 mm
2
), making it ideal for compact radio designs.
Electrical Specifi cations,
T
A
= +25° C, as a function of Vdd
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
23
12
13
Vdd = +3V
Min.
Typ.
2.3 - 2.7
15.5
0.025
11
17
14
17
26
7
50
27
14
0.035
14
Max.
Min.
Vdd = +5V
Typ.
0.8 - 2.3
18
0.025
8
13
17
20
30
7.5
53
26
13.5
0.035
13
Max.
Min.
Vdd = +5V
Typ.
2.3 - 2.7
16
0.025
11
12
16.5
19.5
29
7
53
24
12
0.035
10
Max.
Min.
Vdd = +5V
Typ.
2.7 - 3.8
13
0.025
13
13
15
17
27
7
53
0.035
Max.
Units
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dB
mA
5-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Broadband Gain
& Return Loss @ Vdd = +5V
30
20
RESPONSE (dB)
10
0
-10
-20
-30
0.5
S11
S21
S22
P1dB vs. Vdd Bias
24
20
16
12
8
4
0
0.5
Vdd=+5V
Vdd=+3V
1
1.5
2
2.5
3
3.5
4
4.5
5
P1dB (dBm)
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain vs. Temperature @ Vdd = +5V
24
20
16
GAIN (dB)
12
8
4
0
0.5
+25 C
+85 C
-40 C
Gain vs. Temperature @ Vdd = +3V
24
20
16
GAIN (dB)
12
8
4
0
0.5
+25 C
+85 C
-40 C
1
1.5
2
2.5
3
3.5
4
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Input & Output
Return Loss vs. Vdd Bias
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
0.5
Reverse Isolation vs. Vdd Bias
0
REVERSE ISOLATION (dB)
-10
-20
-30
-40
-50
-60
0.5
Vdd=+5V
Vdd=+3V
S11 Vdd=+5V
S22 Vdd=+5V
S11 Vdd=+3V
S22 Vdd=+3V
1
1.5
2
2.5
3
3.5
4
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Power Compression
@ 2.5 GHz, Vdd = +5V
28
Pout (dBm), GAIN (dB), PAE (%)
Power Compression
@ 2.0 GHz, Vdd = +5V
Pout (dBm), GAIN (dB), PAE (%)
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
28
24
20
16
12
8
4
0
-4
-20 -18 -16 -14 -12 -10 -8
Pout
Gain
PAE
24
20
16
12
8
4
0
-4
-20 -18 -16 -14 -12 -10 -8
Pout
Gain
PAE
-6
-4
-2
0
2
4
6
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Psat vs. Temperature @ Vdd = +5V
24
Output P1dB vs. Temperature @ Vdd = +5V
24
20
P1dB (dBm)
Psat (dBm)
20
16
+25 C
+85 C
-40 C
16
+25 C
+85 C
-40 C
12
12
8
8
4
0.5
1
1.5
2
2.5
3
3.5
4
4
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3
vs. Temperature @ Vdd = +5V
38
34
30
IP3 (dBm)
26
22
18
14
10
6
0.5
+25 C
+85 C
-40 C
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
5-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Power Compression
@ 2.5 GHz, Vdd = +3V
28
Pout (dBm), GAIN (dB), PAE (%)
Power Compression
@ 2.0 GHz, Vdd = +3V
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
24
20
16
12
8
4
0
-4
-20 -18 -16 -14 -12 -10 -8
Pout
Gain
PAE
-6
-4
-2
0
2
4
6
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Psat vs. Temperature @ Vdd = +3V
24
Output P1dB vs. Temperature @ Vdd = +3V
24
20
P1dB (dBm)
Psat (dBm)
20
16
+25 C
+85 C
-40 C
16
12
12
+25 C
+85 C
-40 C
8
8
4
0.5
1
1.5
2
2.5
3
3.5
4
4
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3
vs. Temperature @ Vdd = +3V
38
34
30
IP3 (dBm)
26
22
18
14
10
6
0.5
+25 C
+85 C
-40 C
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.5
+3.0
+3.5
+4.5
Idd (mA)
49
50
51
50
53
54
Absolute Maximum Ratings
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6.25 mW/°C above 85 °C)
Thermal Resistance
(channel to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+7.0 Vdc
+10 dBm
150 °C
0.406 W
160 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
+5.0
+5.5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
Package Information
Part Number
HMC308
HMC308E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H308
XXXX
308E
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
5-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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