HCF4016B
QUAD BILATERAL SWITCH
s
s
s
s
s
s
s
s
s
s
s
s
s
20V DIGITAL OR ±10V PEAK TO PEAK
SWITCHING
280Ω TYPICAL ON RESISTANCE FOR 15V
OPERATION
SWITCH ON RESISTANCE MATCHED TO
WITHIN 10Ω TYP. OVER 15V SIGNAL INPUT
RANGE
HIGH ON/OFF OUTPUT VOLTAGE RATIO :
65dB TYP. at f
IS
= 10KHz, R
L
= 10KΩ
HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at f
IS
= 1KHz, V
IS
= 5 V
pp
,
V
DD
- V
SS
> 10V, RL = 10KΩ
EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET
CURRENT AND HIGH EFFECTIVE OFF
RESISTANCE : 100pA TYP.
at V
DD
- V
SS
= 18V, T
amb
= 25°C
EXTREMELY HIGH CONTROL INPUT
IMPEDANCE (control circuit isolated from
signal circuit 10
12
Ω
typ.)
LOW CROSSTALK BETWEEN SWITCHES :
50dB Typ. at f
IS
= 0.9MHz, R
L
= 1KΩ
MATCHED CONTROL - INPUT TO SIGNAL
OUTPUT CAPACITANCE : REDUCES
OUTPUT SIGNAL TRANSIENTS
FREQUENCY RESPONSE SWITCH ON :
40MHz (Typ.)
QUIESCENT CURRENT SPECIF. UP TO 20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
s
s
TUBE
HCF4016BEY
HCF4016BM1
T&R
HCF4016M013TR
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4016B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4016B is a QUAD BILATERAL SWITCH
intended for the transmission or multiplexing of
analog or digital signals.
Each of the four independent bilateral switches
has a single control signal input which
simultaneously biases both the p and n device in a
given switch ON or OFF.
PIN CONNECTION
September 2001
1/9
HCF4016B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 4, 8, 11
2, 3, 9, 10
13, 5, 6, 12
7
14
SYMBOL
A to D I/O
A to D O/I
CONTROL
A to D
V
SS
V
DD
NAME AND FUNCTION
Independent Inputs/Out-
puts
Independent Outputs/
Inputs
Enable Inputs
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
CONTROL
H
L
SWITCH FUNCTION
ON
OFF
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Value
-0.5 to +22
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-65 to +150
Unit
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
2/9
HCF4016B
TYPICAL "ON" RESISTANCE CHARACTERISTICS,
T
amb
= 25°C
Load Conditions
Supply Conditions
Characteristics*
V
DD
(V)
R
ON
R
ON
(max.)
R
ON
R
ON
(max.)
R
ON
R
ON
(max.)
R
ON
R
ON
(max.)
+ 15
+ 15
+ 10
+ 10
+5
+5
+ 2.5
+ 2.5
V
SS
(V)
0
0
0
0
0
0
- 2.5
- 2.5
RL = 1KΩ
Value
(Ω)
200
200
300
290
290
500
860
600
1.7K
590
720
232K
V
is
(V)
+ 15
0
+ 11
+ 10
0
+ 7.4
+5
0
+ 4.2
+ 2.5
- 2.5
±
0.25
RL = 10KΩ
Value
(Ω)
200
200
300
250
250
560
470
580
7K
450
520
300K
V
is
(V)
+ 15
0
+ 9.3
+ 10
0
+ 5.6
+5
0
+ 2.9
+ 2.5
- 2.5
±
0.25
RL = 100KΩ
Value
(Ω)
180
200
300
240
300
610
450
800
33K
490
520
870K
V
is
(V)
+ 15
0
+ 9.2
+ 10
0
+ 5.5
+5
0
+ 2.7
+ 2.5
- 2.5
±
0.25
* Variation from a perfect switch, R
ON
= 0Ω
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200KΩ
R
T
= Z
OUT
of pulse generator (typically 50Ω)
5/9
单片机
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