HMC283
v03.1007
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Typical Applications
The HMC283 is ideal for:
• Millimeterwave Point-to-Point Radios
Features
High Gain: 21 dB
Psat Output Power: +21 dBm
Wideband Performance: 17 - 40 GHz
Small Chip Size: 1.72 x 0.88 x 0.1 mm
3
LINEAR & POWER AMPLIFIERS - CHIP
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC283 chip is a four stage GaAs MMIC Medium
Power Amplifier (MPA) which covers the frequency
range of 17 to 40 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
small size. The chip utilizes a GaAs PHEMT process
offering 21 dB gain and +21 dBm output power from a
bias supply of +3.5V @ 300 mA. The HMC283 may
be used as a frequency doubler. A B.I.T. (Built-In-Test)
pad (Vdet) allows monitoring microwave output power.
All data is with the chip in a 50 ohm test fixture con-
nected via 0.076 x 0.0127mm (3mil x 0.5mil) ribbon
bonds of minimal length 0.31mm (<12mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd= +3.5V*, ldd = 300 mA
Parameter
Frequency Range
Gain
Gain Flatness (Any 1 GHz BW)
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.)
40
14
17
21
16
Min.
Typ.
17 - 40
21
±0.8
9
6
50
18
21
26
10
300
14
400
Max.
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
*Vdd = Vdd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vgg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
3-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC283
v03.1007
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Broadband Gain & Return Loss
30
25
20
RESPONSE (dB)
15
Gain vs. Temperature
30
26
S11
S21
S22
GAIN (dB)
10
5
0
-5
-10
-15
-20
-25
0
10
20
FREQUENCY (GHz)
22
3
+25C
-55C
+85C
18
14
10
30
40
10
15
20
25
30
35
40
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
Input Return Loss vs. Temperature
0
-4
ISOLATION (dB)
-20
-30
-55 C
-40
-50
-60
+25 C
-70
10
15
20
25
30
35
40
FREQUENCY (GHz)
-20
10
15
20
25
30
35
40
FREQUENCY (GHz)
+85 C
RETURN LOSS (dB)
-8
-12
+25C
-55C
+85C
-16
Noise Figure vs. Temperature
14
12
Output Return Loss vs. Temperature
0
-4
NOISE FIGURE (dB)
10
8
6
4
2
0
10
15
20
25
30
35
40
FREQUENCY (GHz)
-20
10
15
20
25
30
35
40
FREQUENCY (GHz)
RETURN LOSS (dB)
-8
+25 C
-55 C
+85 C
+25 C
-55 C
+85 C
-12
-16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-3
LINEAR & POWER AMPLIFIERS - CHIP
HMC283
v03.1007
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Output P1dB vs. Temperature
23
+25 C
-55 C
+85 C
Power Compression @ 20 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
20
16
12
8
4
0
-10
+25 C
-55 C
+85 C
21
P1dB (dBm)
3
LINEAR & POWER AMPLIFIERS - CHIP
19
17
15
13
16
20
24
28
32
36
40
-8
-6
-4
-2
0
2
4
6
8
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Output Psat vs. Temperature
25
Power Compression @ 28 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
20
16
12
8
4
0
-10
+25 C
-55 C
+85 C
23
Psat (dBm)
21
19
+25C
-55C
+85C
17
15
16
20
24
28
32
36
40
-8
-6
-4
-2
0
2
4
6
8
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IP3 vs. Temperature
Frequency (GHz)
Temperature
-55 °C
+25 °C
+85 °C
All levels in dBm
20
25.6
27.5
27
28
25.4
25.9
24.4
38
28.6
27.1
25.7
Power Compression @ 39 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
22
20
18
16
14
12
10
8
6
4
2
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
+25 C
-55 C
+85 C
INPUT POWER (dBm)
3-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC283
v03.1007
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage
(Vdd1, Vdd2, Vdd3, Vdd4)
Drain Bias Current (Idd)
Gate Bias Voltage
(Vgg1, Vgg2, Vgg3, Vgg4)
Gate Bias Current (Igg)
RF Input Power (RFIN)(Vdd = +3.5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13.04 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5Vdc
400 mA
-2 to +0.4Vdc
4 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3
LINEAR & POWER AMPLIFIERS - CHIP
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
+8 dBm
175 °C
1.174 W
76.7 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
Die Packaging Information
[1]
Standard
GP-2
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-5
HMC283
v03.1007
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Pin Descriptions
Pin Number
1
Function
RFIN
Pin Description
This pad is AC coupled and matched to 50 Ohms.
Power Supply Voltage for the amplifier. External bypass caps
of 100pF and 0.1 μF are required.
Interface Schematic
2
Vdd1
3
3, 10
Vgg2
LINEAR & POWER AMPLIFIERS - CHIP
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
4, 5
Vdd2, 3. 4
Power Supply Voltage for the amplifier. External bypass caps
of 100pF and 0.1 μF are required.
This pad is AC coupled and matched to 50 Ohms.
Output power verification pad.
6
RFOUT
V
DET
7
8
Vgg4
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
9
Vgg3
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
11
Vgg1
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
3-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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