HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Features
Isolation: 52 dB @ 2.0 GHz
40 dB @ 6.0 GHz
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
Non-Reflective Design
Surface Mount Ceramic Package
Typical Applications
The HMC234C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
8
SWITCHES - SMT
• Test Instrumentation
Functional Diagram
General Description
The HMC234C8 is a broadband high isolation non-
reflective GaAs MESFET SPDT switch in a non-
hermetic surface mount ceramic package. Covering
DC to 8.0 GHz, the switch features >52 dB isolation
up to 2 GHz and >38 dB isolation up to 8.0 GHz.
The switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply. This product is an excellent pin-for-pin
replacement to the SMDI SSW124.
Electrical Specifications,
T
A
= +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Insertion Loss
Frequency
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
“On State”
DC - 2.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
0.5 - 8.0 GHz
0.5 - 8.0 GHz
22
40
47
35
33
Min.
Typ.
1.4
1.6
2.1
52
40
38
15
12
14
9
6
26
46
Max.
1.7
1.9
2.4
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Isolation
Return Loss
Return Loss RF1, RF2
“Off State”
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3
5
ns
ns
8 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Insertion Loss
0
Isolation
0
-10
INSERTION LOSS (dB)
-1
-20
ISOLATION (dB)
-2
-30
-40
-50
-60
-70
-80
0
1
2
3
4
5
6
7
8
0
1
2
FREQUENCY (GHz)
3
4
5
FREQUENCY (GHz)
6
7
8
RF1
RF2
-3
+ 25C
+ 85C
- 40C
8
SWITCHES - SMT
-4
-5
Return Loss
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
RFC
RF1, RF2 ON
RF1, RF2 OFF
0.1 and 1 dB Input Compression Point
35
30
INPUT P1dB (dBm)
25
20
1 dB Compression Point
0.1 dB Compression Point
15
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
Input Third Order Intercept Point
60
55
INPUT IP3 (dBm)
50
45
40
35
30
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
+ 25C
+ 85C
- 40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 91
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Absolute Maximum Ratings
RF Input Power (Vctl= -5V)
(0.5 - 8 GHz)
Control Voltage Range (A & B)
Channel Temperature
Thermal Resistance
+30 dBm (@ +50 °C)
+1.0V to -7.5 Vdc
150 °C
94 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Control Voltages
State
Low
High
Bias Condition
0 to -0.2V @ 10 uA Max.
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
8
SWITCHES - SMT
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
Truth Table
Control Input
A
High
Low
B
Low
High
Signal Path State
RFC to RF1
ON
OFF
RFC to RF2
OFF
ON
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Caution: Do not “Hot Switch” power levels greater than +26
dBm (Vctl = 0/-5 Vdc).
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%
2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER
3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER
ELECTROLYTIC NICKEL 100-250 MICROINCHES.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID
SEAL PROTRUSION .005 PER SIDE.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
8 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Suggested Driver Circuit
8
SWITCHES - SMT
Function
GND
Description
Package bottom must also
be connected to PCB RF ground.
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
Interface Schematic
B
See truth table and control voltage table.
A
See truth table and control voltage table.
Pin Descriptions
Pin Number
1, 3, 4
2, 5, 8
RFC, RF1, RF2
6
7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 93
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Evaluation PCB
8
SWITCHES - SMT
List of Materials for Evaluation PCB 105771
Item
J1 - J3
J4 - J6
U1
PCB
[2]
Description
PCB Mount SMA RF Connector
DC Pin
HMC234C8 SPDT Switch
105707 Evaluation PCB
[1]
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should
be generated with proper RF circuit design tech-
niques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The eval-
uation circuit board shown above is available from
Hittite Microwave Corporation upon request.
8 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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