* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
1
PCB Mount
Free Air (TO-220AB)
(TO-263)
d
Symbol
R
thJA
R
thJC
Limit
40
62.5
0.6
Unit
°C/W
SUP/SUB85N10-10
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
=
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
Forward
Transconductance
a
b
Symbol
Test Conditions
Min
100
1
Typ
Max
Unit
3
± 100
1
50
250
V
nA
µA
A
120
0.0085
0.010
0.0105
0.0012
0.017
0.022
25
6550
Drain-Source On-State Resistance
a
r
DS(on)
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15 V, I
D
= 30 A
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Charge
c
Gate-Source
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
665
265
105
160
pF
V
DS
= 50 V, V
GS
= 10 V, I
D
= 85 A
17
23
12
25
135
85
195
85
240
nC
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise
Time
c
DelayTime
c
Turn-Off
V
DD
= 50 V, R
L
= 0.6
Ω
I
D
≅
85 A, V
GEN
= 10 V, R
g
= 2.5
Ω
90
55
130
ns
Fall Time
c
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
I
S
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/µs
I
F
= 85 A, V
GS
= 0 V
1.0
85
4.5
0.17
A
V
ns
A
µC
1.5
140
7
0.35
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
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