HMC327MS8G
/
327MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
5
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.6 GHz applications:
• Wireless Local Loop
Features
Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC327MS8G & HMC327MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Transistor
(HBT) MMIC Power amplifiers which operate between
3.0 and 4.0 GHz. The amplifier is packaged in a low
cost, surface mount 8 leaded package with an exposed
base for improved RF and thermal performance. With
a minimum of external components, the amplifier pro-
vides 21 dB of gain, +30 dBm of saturated power at
45% PAE from a +5.0V supply voltage. Power down
capability is available to conserve current consump-
tion when the amplifier is not in use.
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vctl = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
36
24
17
Min.
Typ.
3.0 - 4.0
21
0.025
15
8
27
30
40
5.0
0.002 / 250
7
40
24
0.035
Max.
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
5 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC327MS8G
/
327MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
24
22
20
18
16
GAIN (dB)
14
12
10
8
6
4
2
0
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
+25 C
+85 C
-40 C
5
AMPLIFIERS - SMT
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
2.5
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
RETURN LOSS (dB)
4.5
-5
-10
3
3.5
FREQUENCY (GHz)
4
-15
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
P1dB vs. Temperature
34
32
30
28
P1dB (dBm)
26
24
22
20
18
16
14
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
+25 C
+85 C
-40 C
Psat vs. Temperature
34
32
30
28
Psat (dBm)
26
24
22
20
18
16
14
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
+25 C
+85 C
-40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 73
HMC327MS8G
/
327MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
5
AMPLIFIERS - SMT
Power Compression @ 3.5 GHz
48
Pout (dBm), GAIN (dB), PAE (%)
42
36
30
24
18
12
6
0
-5
-3
-1
1
3
5
7
9
11
13
15
INPUT POWER (dBm)
Pout (dBm)
Gain (dB)
PAE (%)
Output IP3 vs. Temperature
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
2.5
OIP3 (dBm)
+25 C
+85 C
-40 C
3
3.5
FREQUENCY (GHz)
4
4.5
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
Gain & Power vs. Supply Voltage
28
27
26
25
GAIN dB)
24
23
22
21
20
19
4.5
Gain
32
31
30
29
28
27
26
25
P1dB
Psat
6
5
4
3
2
1
0
3
3.5
4
FREQUENCY (GHz)
+25 C
+85 C
-40 C
24
23
22
5.25
18
4.75
5
Vcc SUPPLY VOLTAGE (Vdc)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
2.5
Power Down Isolation
0
-5
-10
+25 C
+85 C
-40 C
ISOLATION (dB)
4
4.5
-15
-20
-25
-30
-35
-40
2.5
3
3.5
FREQUENCY (GHz)
3
3.5
FREQUENCY (GHz)
4
4.5
5 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC327MS8G
/
327MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Gain, Power & Quiescent Supply
Current vs. Vpd @ 3.5 GHz
30
GAIN (dB), P1dB (dBm), Psat (dBm)
250
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd)
+5.5 Vdc
+5.5 Vdc
+16 dBm
150 °C
1.88 W
34 °C/W
-65 to +150 °C
-40 to +85 °C
5
AMPLIFIERS - SMT
25
200
RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc)
Junction Temperature
Icq (mA)
20
Icq
150
Continuous Pdiss (T = 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
15
P1dB
Psat
Gain
100
10
50
5
2.5
3
3.5
4
Vpd (Vdc)
4.5
5
0
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC327MS8G
HMC327MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H327
XXXX
H327
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 75
HMC327MS8G
/
327MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vpd
Power Control Pin. For maximum power, this pin hsould be connected
to 5.0V. A higher voltage is not recommended. For lower idle current,
this voltage can be reduced.
2, 4, 7
GND
Ground: Backside of package has exposed metal ground slug that must
be connected to ground thru a short path. Vias under the device are
required.
3
RFIN
This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz.
5, 6
RFOUT
RF output and bias for the output stage. The power supply for the
output device needs to be supplied to these pins.
8
Vcc
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed as
close to the device as possible.
5 - 76
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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