HMC203
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
Typical Applications
The HMC203 is ideal for:
• DBS & SATCOM
Features
Conversion Loss: 10 dB
LO / RF Isolation: 38 dB
Passive: No DC Bias Required
Die Size: 1.49 x 0.89 x 0.1 mm
3
MIXERS - CHIP
• Microwave Radio
• Military & Space
• Radar & EW
• Test Equipment & Sensors
Functional Diagram
General Description
The HMC203 chip is a miniature double-balanced
mixer which can be used as an upconverter or down-
converter. Excellent isolations are provided by on-chip
baluns, which require no external components and
no DC bias. The mixer chip can be integrated directly
into MMIC hybrid applications. Unless otherwise
stated, all data was measured with the mixer mounted
in a MMIC test fixture. The MMIC was connected to
thin film 50 ohm transmission lines with 1 mil diameter
wirebonds of <10 mils in length.
Electrical Specifi cations,
T
A
= +25° C, LO Drive = +15 dBm
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Gain Compression (Input)
30
35
12
Min.
Typ.
14 - 23
DC - 2
10
10
38
45
17
18
40
7
12
12
30
35
12
Max.
Min.
Typ.
15 - 21
DC -2
8.5
8.5
38
45
17
18
40
7
10
10
Max.
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
3 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC203
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
Conversion Loss vs LO Drive
0
Isolation, LO = +15 dBm
0
-10
RF/IF
LO/IF
LO/RF
CONVERSION LOSS (dB)
-5
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
3
MIXERS - CHIP
-10
-15
+8 dBm
+10 dBm
+12 dBm
+15 dBm
-20
13
15
17
19
21
23
25
FREQUENCY (GHz)
13
15
17
19
21
23
25
FREQUENCY (GHz)
Conversion Loss @ +85 C vs. LO Drive
0
IF Bandwidth LO = 18 GHz @ +15 dBm
0
CONVERSION LOSS (dB)
CONVERSION LOSS (dB)
-5
-5
-10
-10
-15
+8 dBm
+10 dBm
+12 dBm
+15 dBm
-15
+8 dBm
+10 dBm
+12 dBm
+15 dBm
-20
-20
13
15
17
19
21
23
25
FREQUENCY (GHz)
-25
0
2
4
6
IF FREQUENCY (GHz)
Conversion Loss @ -55 C vs LO Drive
0
RF Coplanar Probe Data LO = +12 dBm
CONVERSION LOSS AND ISOLATION (dB)
0
CONVERSION LOSS
-10
-20
-30
LO/RF ISO
-40
-50
-60
10
15
20
25
30
35
40
FREQUENCY (GHz)
LO/IF ISO
CONVERSION LOSS (dB)
-5
RF/IF ISO
-10
-15
+8 dBm
+10 dBm
+12 dBm
+15 dBm
-20
13
15
17
19
21
23
25
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 37
HMC203
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
Absolute Maximum Ratings
RF / IF Input
LO Drive
+13 dBm
+27 dBm
-65 to +150 °C
-55 to +85 °C
3
MIXERS - CHIP
Storage Temperature
Operating Temperature
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
WP-8
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. BOND PADS ARE .004” SQUARE.
4. BOND PAD SPACING CENTER TO CENTER IS .006”.
5. BACKSIDE METALLIZATION: GOLD.
6. BOND PAD METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. CONNECTION NOT REQUIRED FOR UNLABELED BOND
PADS.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC203
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RF
This pin is AC coupled
and matched to 50 Ohms.
3
MIXERS - CHIP
2
LO
This pin is AC coupled
and matched to 50 Ohms.
3
IF
This pin is DC coupled. For applications not requiring operation
to DC, this port should be DC blocked externally using a series
capacitor whose value has been chosen to pass the necessary IF
frequency range. For operation to DC, this pin must not source/
sink more than 2 mA of current or die non-function and possible
die failure will result.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 39
HMC203
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage:
All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
3
MIXERS - CHIP
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
3 - 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
