HMC135
v03.0304
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz
Typical Applications
The HMC135 is suitable for:
• Wireless Local Loop
• LMDS & VSAT
• Point-to-Point Radios
Features
Chip Integrates Directly into MIC Designs
Carrier Suppression: 30 dB
Direct Modulation in the 1.8 - 5.2 GHz Band
Functions also as a Phase Detector
Die Size: 1.45 x 1.45 x 0.1 mm
4
MODULATORS - CHIP
• Test Equipment
Functional Diagram
General Description
The HMC135 Bi-Phase Modulator is designed to
phase-modulate an RF signal into reference and
180 degree states. Device input is at the RF port
and output is at the LO port. The polarity of the
bias current at the control port (IF port) defines the
phase states. Excellent amplitude and phase balance
provided by closely matched monolithic balun and
diode circuits delivers 30 dB of carrier suppression in
a tiny monolithic chip.
The device also functions as a demodulator or phase
comparator. As a demodulator, data emerges at the
control port when a modulated signal at the RF port
is compared to a reference signal at the LO port.
As a phase comparator, the phase angle between
two signals applied to the RF and LO ports is
represented by an analog voltage at the control port.
Except for carrier suppression, the data presented
here was measured under static conditions in which
a DC bias current (nominally 5 mA) is applied to the
control port.
Electrical Specifi cations,
T
A
= +25° C, 5 mA Bias Current
Parameter
Frequency Band
Insertion Loss
Return Loss, RF and LO Ports
Amplitude Balance
Phase Balance
Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p)
Input Power for 1 dB Compression
Third Order Intercept, Input
Second Order Intercept, Input
Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V
at the control port).
25
0
5
15
2
2.5
Min.
Typ.
1.8 - 5.2
9
3.0
0.2
2.5
30
8
10
30
5
10
0.5
5.0
11
Max.
Units
GHz
dB
dB
dB
Deg
dBc
dBm
dBm
dBm
mA
4-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC135
v03.1007
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz
Insertion Loss
0
Amplitude Balance
2
AMPLITUDE BALANCE (dB)
-5
INSERTION LOSS (dB)
1
-10
0
-15
-1
4
1
2
3
4
5
6
FREQUENCY (GHz)
1
2
3
4
5
6
FREQUENCY (GHz)
Phase Balance
10
8
6
PHASE BALANCE (Deg)
4
2
0
-2
-4
-6
-8
-10
1
2
3
4
5
6
Carrier Suppression *
50
CARRIER SUPPRESSION (dBc)
40
30
20
10
0
2
3
4
5
6
CARRIER FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss
0
RETURN LOSS (dB)
-5
-10
-15
-20
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
* (For 1.4 Vp-p Square Wave Modulation at 1 MHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4-3
MODULATORS - CHIP
-20
-2
HMC135
v03.1007
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz
Input Compression vs Frequency *
12
10
P1dB (dBm)
Input Compression vs Bias at 4 GHz
14
12
10
P1dB (dBm)
8
6
4
2
0
2
3
4
5
CARRIER FREQUENCY (GHz)
6
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
BIAS CURRENT (mA)
4
MODULATORS - CHIP
Input Third Order Intercept vs Frequency *
25
20
IP3 (dBm)
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
BIAS CURRENT (mA)
Input Third Order Intercept vs Bias at 4 GHz
25
20
IP3 (dBm)
15
10
5
0
0
1
2
3
4
5
6
7
BIAS CURRENT (mA)
8
9
10
* (For 5 mA Bias Current)
Suggested TTL Driver for a Bi-Phase Modulator
+5 Vdc
+2.5 Vdc
MODULATOR
I, Q PORTS
*R 1
IA
.01 uF
VCC
VCC
HCT04
TTL
V Z = 2V
GND
HC04
VA
0.6V
GND
2.2K
-2.5 Vdc
.01 uF
HITTITE
MODULATOR
Notes
1. V
A
Alternates Between
+ 2.4 V
dc
± I
A
= 2.4 - 0.6 = ± 5 mA
360 Ohm
2. HCT04 and HC04 are QMOS HEX
Inverters.
*R
1
=300 to 620 ± 2% Select R
1
To
Supply ±3 to ±6 mA to the IF Port.
4-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC135
v03.1007
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz
Outline Drawing
4
MODULATORS - CHIP
Die Packaging Information
[1]
Standard
WP-3
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BOND PAD SPACING IS .006” CENTER TO CENTER.
4. BACKSIDE METALIZATION: GOLD.
5. BACKSIDE METAL IS GROUND.
6. BOND PAD METALIZATION: GOLD.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4-5
HMC135
v03.1007
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz
Pad Descriptions
Pad Number
Function
Description
This pin is DC coupled. For applications not requiring oper-
ation to DC, this port should be DC blocked externally using
a series capacitor whose value has been chosen to pass
the necessary IF frequency range. For operation to DC this
pin must not source or sink more than 2mA of current or die
non-function and possible die failure will result.
Interface Schematic
1
IF
4
2
RF
DC coupled and matched to 50 Ohms.
MODULATORS - CHIP
3
LO
DC coupled and matched to 50 Ohms.
4-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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