电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N4004GP

产品描述1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
产品类别半导体    分立半导体   
文件大小101KB,共2页
制造商DAESAN
官网地址http://www.diodelink.com
下载文档 选型对比 全文预览

1N4004GP在线购买

供应商 器件名称 价格 最低购买 库存  
1N4004GP - - 点击查看 点击购买

1N4004GP概述

1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL

文档预览

下载PDF文档
1N4001GP THRU 1N4007GP
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· High current capability
· Low reverse leakage
· Glass passivated junction
· Low forward voltage drop
· High temperature soldering guaranteed : 350℃/10 seconds,
0.375"(9.5mm) lead length, 5 lbs, (2.3kg) tension
CURRENT 1.0 Ampere
VOLTAGE 50 to 1300 Volts
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
Mechanical Data
· Case : JEDEC DO-41 molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.33 gram
0.034(0.9)
0.028(0.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=75℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 1.0A
Maximum reverse current
at rated DC blocking voltage
T
A
=25℃
T
A
=100℃
JA
JL
C
J
T
J
T
STG
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
1N
4001GP
50
35
50
1N
4002GP
100
70
100
1N
4003GP
200
140
200
1N
4004GP
400
280
400
1.0
30.0
1.1
5.0
50.0
50.0
25.0
15.0
1N
4005GP
600
420
600
1N
4006GP
800
560
800
1N
4007GP
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
Volts
μA
Typical thermal resistance (Note 1)
Typical junction capacitance (Note 2)
Operating and storage temperature range
℃/W
pF
-65 to +175
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted

1N4004GP相似产品对比

1N4004GP 1N4001GP 1N4002GP 1N4003GP
描述 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1312  1495  644  2074  2339  3  41  23  57  27 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved