N-Channel Junction FET
RJN1163
Electret Capacitor Microphone Applications
Features
Specially suited for use in audio and
telephone electret capacitor microphones
Excellent voltage gain
Very low noise
High ESD voltage
Ultra-small size package
Package Type : SOT-300
[unit:mm]
1.60
±0.05
0.31
±0.03
0.12
±0.03
3
1.40
±0.01
0.80
±0.05
0~0.02
Applications
Cellular phones
Portable audio
PDAs
MP3 players
1
0.21
±0.03
0.5
±0.05
2
0.21
±0.03
0.5
±0.05
MAX 0.34
[TOP VIEW]
[SIDE VIEW]
1. Drain
2. Source
3. Gate
Absolute Maximum Ratings at Ta = 25
o
C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
GDO
I
G
I
D
P
D
Tj
Tstg
Ratings
-20
10
10
100
150
-55 to +150
Unit
V
mA
mA
mW
o
o
C
C
Electrical Characteristics at Ta = 25
o
C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V
(BR)GDO
V
GS(off)
I
DSS
|yfs|
Ciss
Crss
Conditions
I
G
= -100µA
V
DS
= 5V, I
D
= 1µA
V
DS
= 5V, V
GS
= 0
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
Min
-20
-0.2
70*
0.4
Ratings
Typ
Max
-0.6
1.2
3.5
0.8
-1.5
430*
Unit
V
V
µA
mS
pF
pF
* The RJN1163 is classified by I
DSS
as follows
Classification
A1
I
DSS
(µA)
70~120
A2
100~170
B
150~270
C
210~350
D
320~430
RFsemi Technologies, Inc.
Rev. 4
RJN1163
Electrical Characteristics
Parameter
o
Symbol
Conditions
Min
Typ
-3.0
-1.2
Max
Unit
dB
dB
dB
MΩ
Ω
%
dB
[Ta = 25
C
, V
CC
= 4.5V, R
L
= 1kΩ, C
IN
= 15pF, See Specified Test Circuit.]
Voltage Gain
G
V
V
IN
= 10 mV, f = 1kHz
>
V
IN
= 10 mV, V
CC
= 4.5
-
1.5V
Reduced Voltage Characteristics
∆G
VV
f = 1kHz to 110Hz
Frequency Characteristics
∆G
Vf
Input Impedance
Z
IN
f = 1kHz
Output Impedance
Z
O
f = 1kHz
Total Harmonic Distortion
THD
V
IN
= 10mV, f = 1kHz
Output Noise Voltage
V
NO
V
IN
= 0, A curve
-3.5
-1.0
700
30
1.0
-110
Test Circuit
Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
1kΩ
15pF
33µF
Vcc = 4.5V
Vcc = 1.5V
OSC
B
V
THD
A
1kΩ
VTVM
Output Impedance
500
I
D
- V
DS
Drain Current, I
D
-
µA
500
I
D
- V
DS
Drain Current, I
D
-
µA
400
400
300
V
GS
= 0V
-0.1V
-0.2V
V
GS
= 0V
300
200
200
-0.1V
-0.2V
100
-0.5V
0
0
1
2
3
-0.3V
-0.4V
4
5
100
-0.5V
0
0
2
4
6
8
-0.3V
-0.4V
10
Drain - to - Source Voltage, V
DS
- V
Drain - to - Source Voltage, V
DS
- V
RFsemi Technologies, Inc.
Rev. 4
RJN1163
V
DS
= 5V
1,000
Forward Transfer Admittance, l y
fs
l - mS
I
D
- V
GS
800
5
l yfs l - I
DSS
V
DS
= 5V
V
GS
= 0V
f = 1kHz
3
2
600
Drain Current, I
D
-
µA
I
S
DS
=6
µ
A
50
4
µ
A
20
2
µ
A
00
1
0.7
0.5
400
200
0.3
0.2
50
70
100
200
300
500
700
1000
2000
0
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
Gate - to - Source Voltage, V
GS
- V
Drain Current, I
DSS
-
µA
2
V
GS(off)
- I
DSS
Input Capacitance, Ciss - pF
20
Ciss - V
DS
V
GS
= 0
f = 1MHz
V
DS
= 5V
I
D
= 1µA
Cutoff Voltage, V
GS(off)
- V
-1
0.7
0.5
10
7
5
0.3
0.2
3
2
-0.1
50
70
100
200
300
500
700
1000
2000
1
0.7
1
2
3
5
7
10
20
30
Drain Current, I
DSS
-
µA
Drain - to - Source Voltage, V
DS
- V
Reverse Transfer Capacitance, Crss - pF
5
3
2
Crss - V
DS
V
GS
= 0
f = 1MHz
2
G
V
- I
DSS
0
Voltage Gain, G
v
-dB
-2
1
0.7
0.5
0.3
0.2
-4
-6
-8
G
V
: V
CC
= 5V
V
IN
= 10mV
R
L
= 1.0kΩ
f = 1kHz
I
DSS
: V
DS
= 5.0V
50
70
100
200
300
500
700
1000
0.1
0.7
1
2
3
5
7
10
20
-10
Drain - to - Voltage, V
DS
- V
Drain Current, I
DSS
-
µA
RFsemi Technologies, Inc.
Rev. 4
RJN1163
Reduced Voltage Characteristics,
∆G
VV
- dB
2
1
0
-1
-2
-3
-4
-5
50
70
100
200
∆G
VV
: V
CC
= 4.5V to 1.5V
V
IN
= 10mV
f=1kHz
I
DSS
: V
DS
= 5.0V
Total Harmonic Distortion, THD - %
3
∆G
VV
- I
DSS
THD - I
DSS
5
3
2
THD : V
CC
= 4.5V
V
IN
= 30mV
f = 1kHz
I
DSS
: V
DS
= 5.0V
1
0.7
0.5
0.3
50
70
100
300
500
700
1000
Drain Current, I
DSS
-
µA
Drain Current, I
DSS
-
µA
200
300
500
700
1000
Z
IN
- I
DSS
Input Impedance, Z
IN
- MΩ
Output Impedance, Z
o
-
Ω
44
42
Z
IN
: V
CC
= 4.5V
V
IN
= 10mV
f = 1kHz
I
DSS
: V
DS
= 5.0V
700
Z
O
- I
DSS
Z
O
: V
CC
= 4.5V
V
IN
= 10mV
f = 1kHz
I
DSS
: V
DS
= 5.0V
600
500
40
400
38
300
36
200
50
70
100
200
300
500
700
1000
50
70
100
Drain Current, I
DSS
-
µA
200
300
500
700
1000
Drain Current, I
DSS
-
µA
Allowable Power Dissipation, P
D
-mW
Total Harmonic Distortion, THD - %
120
P
D
- Ta
30
20
THD - V
IN
THD : V
CC
= 4.5V
f = 1kHz
I
DSS
: V
DS
= 5.0V
0
µ
A
= 10
µ
A
I
DSS
300 A
µ
400
100
10
7
5
3
2
80
60
40
20
1
0.7
0.5
0
40
80
120
160
200
240
0
0
20
40
60
80
100
120
140
160
o
Ambient Temperature, Ta - C
Input Voltage, V
IN
- mV
RFsemi Technologies, Inc.
Rev. 4
模拟电子
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