GaAs Infrared Emitter
C
OPE5594A
The
OPE5594S
is GaAlAs infrared emitting diode
DIMENSIONS (Unit : mm)
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-
3/4
plastic package
and has narrow beam angle with lensed package
and cup frame.
5.0
5.7
7.7
8.7
FEATURESC
•
High-output powerC
•
Narrow beam angle
•
High reliability and long term stability
•
Available for pulse operating
C
APPLICATIONSC
•
Optical emitters
•
Optical switches
•
Smoke sensors
•
IR remote control
•
IR sound transmission
1.3 Max
2- 0.5
2.0
2.5
24.0 Min
Anode
Cathode
Tolerance :
±0.2mm
STORAGE
•
Condition : 5°C~35°C,R.H.60%
•
Terms : within 3 months from production date
•
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGSC
C
C
CCCCCCCCCCCCCCCCC(Ta=25°C
)
Item
Symbol
Rating
Unit
Power Dissipation
P
DC
150
C
Forward current
I
FC
100
EC
CCC
1C
I
FPC
1.0
AC
Pulse forward current
Reverse voltage
V
RC
5.0
C
Operating temp.
Topr.
-25~ +85
°CC
CCCCCCCCCCCCCC
2
Tsol.
260.
°CC
Soldering temp.
1
.Duty ratio = 1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
C
C
Symbol
V
F
I
R
Ct
Ie
p
(Ta=25°C)
Conditions
I
F
=100mA
V
R
= 5V
f = 1MHz
I
F
=100mA
I
F
= 50mA
I
F
= 50mA
I
F
=100mA
20
80
940
45
±10
Min.
Typ.
1.4
Max.
1.7
10
Unit
V
µA
pF
mW/
nm
nm
deg.
CC
GaAlAs Infrared Emitter
FORWARD CURRENT Vs.
AMBIENT TEMP.
400
200
100
50
30
10
5
3
1
0.5
0.3
0.1
0
20
40
60
80
Ambient Temperature Ta()
100
1
OPE5594A
RADIANT INTENSITY Vs.
FORWARD CURRENT.
Ta=25
Ta=25
100
80
60
40
20
0
-20
3 5 10
30 50 100 200
Forward Current IF(mA)
500
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
1.0
I
F
=50mA
3
2
1
0.8
0.5
0.3
0.2
0.1
-20
0
20
40
60
80
100
0.8
0.6
0.4
0.2
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
Ta=25
0.0
800
Ambient Temperature Ta()
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
Ta=25
50
30
20
10
5
4
3
2
1
1.0
1.1
1.2
1.3
1.4
Forward Voltage V
F
(V)
1.5
1.6
850 900 950 1000 1050
Emission Wavelength
(nm)
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25
-20°
-30°
-40°
-50°
-60°
-70°
-80°
-90°
1.0
0.5
0
0.5
Relative Radiant intensity
-10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.0
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