SEMiX 303GD12T4c
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMiX
®
33c
Trench IGBT Modules
SEMiX 303GD12T4c
Inverse Diode
Module
Target Data
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GD
1
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMiX
®
33c
Trench IGBT Modules
Module
SEMiX 303GD12T4c
Target Data
Features
Temperature sensor
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD
2
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. R
CC'+EE'
4
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
5
16-07-2007 SCH
© by SEMIKRON