6MBP150RA060
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
600V / 150A 6 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at
Tc=25°C unless otherwise specified)
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
Symbol
V
DC
V
DC(surge)
V
SC
V
CES
I
C
I
CP
-I
C
P
C
T
j
V
CC
V
in
*1
*2
Rating
Min.
0
0
200
0
-
-
-
-
-
0
0
-
0
-
-40
-20
-
-
-
Max.
450
500
400
600
150
300
150
595
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *
6
3.5 *
6
Unit
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
DC
1ms
Duty=58.8%
Collector power dissipation
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
I
in
V
ALM *3
I
ALM *4
T
stg
T
op
V
iso
*5
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply V
ALM
between terminal No. 16 and 10.
*4 Apply I
ALM
to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit
(at Tc=Tj=25°C, Vcc=15V)
Item
INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Symbol
I
CES
V
CE(sat)
V
F
Condition
V
CE
=600V input terminal open
Ic=150A
-Ic=150A
Min.
–
–
–
Typ.
–
–
–
Max.
1.0
2.8
3.0
Unit
mA
V
V
6MBP150RA060
Electrical characteristics of control circuit(at
Tc=Tj=25°C, Vcc=15V)
Item
Symbol
Power supply current of P-line side Pre-driver(one unit) I
ccp
I
CCN
Power supply current of N-line side three Pre-driver
V
in(th)
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*
7
Switching frequency of IPM
V
Z
T
COH
T
CH
T
jOH
T
jH
I
OC
t
DOC
V
UV
V
H
t
ALM
t
SC
R
ALM
Condition
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
IGBT-IPM
Min.
Typ.
Max.
3
-
18
10
-
65
1.00
1.35
1.70
1.25
Unit
mA
mA
-
VDC=0V, Ic=0A, Case temperature, Fig.1 110
-
surface of IGBT chips
150
-
Tj=125°C
225
Tj=25°C Fig.2
-
11.0
0.2
1.5
Tj=25°C Fig.3
-
1425
V
1.60
1.95 V
V
8.0
-
°C
-
125
°C
20
-
°C
-
-
°C
20
-
A
-
-
µs
10
-
-
12.5 V
V
-
-
ms
2
-
µs
-
12
ohm
1500
1575
Dynamic characteristics(at
Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Switching time (FWD)
Symbol Condition
ton
toff
trr
IC=150A, VDC=300V
IF=150A, VDC=300V
Min.
0.3
-
-
Typ.
-
-
-
Max.
-
3.6
0.4
Unit
µs
µs
µs
Definition of tsc
Thermal characteristics(
Tc=25°C)
Item
Junction to Case thermal resistance
Case to fin thermal resistance with compound
INV
IGBT
FWD
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
-
-
0.05
Max.
0.21
0.47
-
Unit
°C/W
°C/W
°C/W
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
V
DC
V
CC
f
SW
-
-
Min.
200
13.5
1
2.5
2.5
Typ.
-
15
-
-
-
Max.
400
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
6MBP150RA060
Block diagram
IGBT-IPM
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
6MBP150RA060
Characteristics (Representative)
Control circuit
IGBT-IPM
Power supply current vs. Switching frequency
Tj=100°C
40
35
N-side
·········
P-side
2.5
Input signal threshold voltage
vs. Power supply voltage
Tj=25°C
·········
Tj=125°C
Power supply current Icc (mA)
2.0
30
25
20
15
10
5
0
0
5
10
15
20
25
0
12
13
14
15
16
17
18
Input signal threshold voltage
Vin (
ON
), Vin (
OFF
), (V)
Switching frequency fsw (kHz)
1.5
1.0
0.5
Power supply voltage Vcc (V)
Undervoltage vs. Junction temperature
14
1.0
Undervoltage hysterisis vs. Junction temperature
Undervoltage hysterisis V
H
(V)
12
0.8
10
Undervoltage V
UVT
(V)
0.6
8
6
0.4
4
0.2
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
0
Junction temperature Tj (
°C
)
Junction temperature Tj (
°C
)
Alarm hold time vs. Power supply voltage
3.0
200
Overheating characteristics T
COH
,T
jOH
,T
CH
,T
jH
vs. V
CC
Alarm hold time t
ALM
(msec.)
2.5
Overheating protection T
COH
,T
jOH
(
°C
)
OH hysterisis T
CH
,T
jH
(
°C)
13
14
15
16
17
18
150
2.0
1.5
100
1.0
50
0.5
0
12
0
12
13
14
15
16
17
18
Power supply voltage Vcc (
V
)
Power supply voltage Vcc (
V
)
6MBP150RA060
Inverter
IGBT-IPM
Collector current vs. Collector-Emitter voltage
Tj=25°C
300
300
Collector current vs. Collector-Emitter voltage
Tj=125°C
250
250
Collector current Ic (A)
150
Collector current Ic (A)
0
1
2
3
4
200
200
150
100
100
50
50
0
0
0
1
2
3
4
Collector-Emitter voltage V
CE
(V)
Collector-Emitter voltage V
CE
(V)
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
Switching time ton, toff (nsec.)
Switching time ton, toff (nsec.)
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
1000
1000
100
100
0
50
100
150
200
250
0
50
100
150
200
250
Collector current I
C
(A)
Collector current I
C
(A)
Forward current vs. Forward voltage
300
Reverse recovery characteristics trr, Irr, vs. I
F
250
Reverse recovery current Irr (A)
Reverse recovery time trr (nsec.)
0
1
2
3
4
100
Forward current I
F
(A)
200
150
100
50
10
0
0
50
100
150
200
250
Foeward voltage V
F
(V)
Foeward current I
F
(A)
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