TS13003
High Voltage NPN Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
400V
700V
1.5A
0.8V @ I
C
/ I
B
= 0.5A / 0.1A
Features
●
●
High Voltage
High Speed Switching
Block Diagram
Structure
●
●
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No.
TS13003CT B0
TS13003CT B0G
TS13003CT A3
TS13003CT A3G
TS13003CK B0
Package
TO-92
TO-92
TO-92
TO-92
TO-126
Packing
1Kpcs / Bulk
1Kpcs / Bulk
2Kpcs / Ammo
2Kpcs / Ammo
1Kpcs / Bulk
Note: “G” denote for Sb Free
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ Tc= 25 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
o
Symbol
V
CBO
V
CEO
V
EBO
DC
Pulse
TO-92
TO-126
I
C
P
tot
T
J
T
STG
Limit
700V
400V
9
1.5
3
1.5
30
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance
TO-92
TO-126
Symbol
RӨ
JA
Limit
122
90
Unit
o
C/W
1/6
Version: D07
TS13003
High Voltage NPN Transistor
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
*
I
C
= 1mA, I
B
= 0
I
C
= 10mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
EB
= 9V, I
C
= 0
I
C
/ I
B
= 0.5A / 0.1A
I
C
/ I
B
= 1.0A / 0.25A
I
C
/ I
B
= 1.5A / 0.5A
Base-Emitter Saturation Voltage
*
I
C
/ I
B
= 0.5A / 0.1A
I
C
/ I
B
= 1.0A / 0.25A
V
CE
= 5V, I
C
= 10mA
DC Current Gain
*
Dynamic Characteristics
Frequency
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 1A,
I
B1
= I
B2
= 0.2A,
t
p
= 25uS
Duty Cycle
≤1%
f
T
Cob
t
d
t
r
t
STG
t
f
4
--
--
--
--
--
--
21
0.05
0.5
2
0.4
--
--
0.2
1
4
0.7
MHz
pF
uS
uS
uS
uS
V
CE
= 10V, I
C
= 400mA
V
CE
= 2V, I
C
= 1A
h
FE
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
CE(SAT)3
V
BE(SAT)1
V
BE(SAT)2
700
400
9
--
--
--
--
--
--
--
6
20
8
--
--
--
--
--
0.25
0.5
1.2
--
--
--
--
--
--
--
--
1
1
0.5
1
3
1
1.2
40
40
40
V
V
V
V
V
uA
uA
Conditions
Symbol
Min
Typ
Max
Unit
Resistive Load Switching Time (Ratings)
*
Note: pulse test: pulse width
≤300uS,
duty cycle
≤2%
2/6
Version: D07
TS13003
High Voltage NPN Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. V
CE(SAT)
v.s. V
BE(SAT
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
3/6
Version: D07
TS13003
High Voltage NPN Transistor
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
14.30(typ)
0.563(typ)
0.43
0.49
0.017
0.019
2.19
2.81
0.086
0.111
3.30
3.70
0.130
0.146
2.42
2.66
0.095
0.105
0.37
0.43
0.015
0.017
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
= Lot Code
4/6
Version: D07
TS13003
High Voltage NPN Transistor
TO-126 Mechanical Drawing
DIM
∝1
∝2
∝3
∝4
A
B
C
D
E
F
G
H
I
J
K
L
M
TO-126 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
3ºC
--
3ºC
--
3ºC
3ºC
--
--
3ºC
3ºC
--
--
3ºC
3ºC
--
--
0.150
0.153
3.81
3.91
0.275
0.279
6.99
7.09
0.531
0.610
13.50
15.50
0.285
0.303
7.52
7.72
0.034
0.041
0.95
1.05
0.028
0.031
0.71
0.81
0.048
0.052
1.22
1.32
0.170
0.189
4.34
4.80
0.095
0.105
2.41
2.66
0.045
0.055
1.14
1.39
0.045
0.055
1.14
1.39
--
0.021
--
0.55
0.137
0.152
3.50
3.86
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/6
Version: D07
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