UVEPROM
SMJ27C010A
AS27C010A
1 MEG UVEPROM
UV Erasable Programmable
Read-Only Memory
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-89614
• MIL-STD-883
PIN ASSIGNMENT
(Top View)
32-Pin DIP (J)
(600 MIL)
V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
PGM\
NC
A14
A13
A8
A9
A11
G\
A10
E\
DQ7
DQ6
DQ5
DQ4
DQ3
FEATURES
• Organized 131,072 x 8
• Single +5V ±10% power supply
• Operationally compatible with existing megabit EPROMs
• Industry standard 32-pin ceramic dual-in-line package
• All inputs/outputs fully TTL compatible
• 8-bit output for use in microprocessor-based systems
• Very high-speed SNAP! Pulse Programming
• Power-saving CMOS technology
• 3-state output buffers
• 400mV minimum DC noise immunity with standard
TTL loads
• Latchup immunity of 250 mA on all input and output pins
• No pullup resistors required
• Low power dissipation (Vcc = 5.5V)
Active - 165 mW Worst Case
Standby - 0.55 mW Worst Case (CMOS-input levels)
32-Pin LCC (ECA)
(450 x 550 mils)
A12
A12
A14
A15
6
A10
A16
V
NC
PP
V
CC
V
CC
A15
PGM\
CE2
NC
4 3 2 1 32 31 30
OPTIONS
MARKING
A
A7
7
5
A
A6
6
6
A
A5
5
7
A
A4
4
8
A
A3
3
9
A
A2
2
10
A
A1
1
11
A
A0
0
12
DQ0
DQ1 13
29
A14
\
WE
28
A13
A13
8
27
A
A8
9
26
A
A9
25
A11
A11
24
G\
\
OE
23
A10
A10
22
E
CE1
\
\
21
DQ7
DQ8
• Timing
120ns access
-12
150ns access
-15
200ns access
-20
• Package(s)
Ceramic DIP (600mils)
J
Ceramic 32 LCC (450 x 500mils) ECA
• Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
M
14 15 16 17 18 19 20
No. 114
No. 208
Pin Name
A0 - A18
DA0-DQ7
E\
G\
GND
PGM\
V
CC
Function
Address Inputs
Inputs (programming)/Outputs
Chip Enable
Output Enable
Ground
Program
5V Supply
GENERAL DESCRIPTION
The SMJ27C010A series are 131072 by 8-bit (1048576-
bit), ultaviolet (UV) light erasable, electrically programmable
read-only memories (EPROMs).
These devices are fabricated using power-saving CMOS
technology for high speed and simple interface with MOS and
bipolar circuits. All inputs (including program data inputs) can
be driven by Series 54 TTL circuits without the use of external
pullup resistors. Each output can drive one Series 54 TTL
circuit without external resistors.
The SMJ27C010A EPROM is offered in a ceramic dual-in-
line package (J suffix) designed for insertion in mounting-hole
rows on 15.2mm (600mil) centers.
SMJ27C010A
AS27C010A
Rev. 2.6 01/10
V
PP
13V Power Supply*
*Only in program mode.
These EPROMs operate from a single 5V supply (in the read
mode), and therefore, are ideal for use in microprocessor-based
systems. One other 13V supply is needed for programming.
All programming signals are TTL level. These devices are
programmable using the SNAP! Pulse programming algo-
rithm. The SNAP! Pulse programming algorithm uses a V
PP
of 13V and a V
CC
of 6.5V for a nominal programming time
of thirteen seconds. For programming outside the system,
existing EPROM programmers can be used. Locations can be
programmed singly, in blocks, or at random.
Micross Components reserves the right to change products or specifications without notice.
1
DQ1
DQ2
DQ2
DQ3
V
SS
GND
DQ4
DQ3
DQ5
DQ4
DQ6
DQ5
DQ7
DQ6
UVEPROM
SMJ27C010A
AS27C010A
FUNCTIONAL BLOCK DIAGRAM*
EPROM 131,072 x 8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
E\
G\
12
11
10
9
8
7
6
5
27
26
23
25
4
28
29
3
2
22
24
0
A
0
131,071
A
A
A
A
A
A
A
A
13
14
15
17
18
19
20
21
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
16
[PWR DWN]
&
EN
* This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. J package illustrated.
OPERATION
The seven modes of operation are listed in Table 1. The read mode requires a single 5V supply. All inputs are TTL level
except for V
PP
during programming (13V for SNAP! Pulse), and 12V on A9 for signature mode.
TABLE 1. OPERATION MODES
MODE*
FUNCTION
E\
G\
PGM\
V
PP
V
CC
A9
A0
DQ0-DQ7
READ
V
IL
V
IL
X
V
CC
V
CC
X
X
Data Out
OUTPUT
PROGRAM
SIGNATURE MODE
STANDBY PROGRAMMING VERIFY
DISABLE
INHIBIT
V
IL
V
IL
V
IH
V
IL
V
IL
V
IH
V
IH
X
V
CC
V
CC
X
X
High-Z
X
X
V
CC
V
CC
X
X
High-Z
V
IH
V
IL
V
PP
V
CC
X
X
Data In
V
IL
V
IH
V
PP
V
CC
X
X
Data Out
X
X
V
PP
V
CC
X
X
High-Z
V
H
**
V
IL
V
IL
X
V
CC
V
CC
V
H
**
V
IH
CODE
MFG
DEVICE
97
D6
* X can be V
IL
or V
IH
.
**V
H
= 12V ± 0.5V
SMJ27C010A
AS27C010A
Rev. 2.6 01/10
Micross Components reserves the right to change products or specifications without notice.
2
UVEPROM
SMJ27C010A
AS27C010A
READ/OUTPUT DISABLE
When the outputs of two or more SMJ27C010As are connected
in parallel on the same bus, the output of any particular device
in the circuit can be read with no interference from competing
outputs of the other devices. To read the output of a single
device, a low level signal is applied to the E\ and G\ pins. All
other devices in the circuit should have their outputs disabled
by applying a high-level signal to one of these pins.
programming algorithm as illustrated by the
fl
ow chart (Figure
1). This algorithm programs in a nominal time of thirteen
seconds. Actual programming time varies as a function of the
programmer used.
The SNAP! Pulse programming algorithm uses an initial pulse
of 100 microseconds (μs) followed by a byte verification to
determine when the addressed byte has been successfully
programmed. Up to ten 100μs pulses per byte are provided
before a failure is recognized.
The programming mode is achieved when V
PP
= 13V, V
CC
=
6.5V, E\ = V
IL
, and G\ = V
IH
. Data is presented in
parallel
(eight bits) on pins DQ0 through DQ7. Once addresses and
data are stable, PGM\ is pulsed low.
More than one device can be programmed when the devices
are connected in parallel. Locations can be programmed in
any order. When the SNAP! Pulse programming routine is
complete, all bits are verified with V
CC
= V
PP
= 5V ± 10%.
LATCHUP IMMUNITY
Latchup immunity on the SMJ27C010A is a minimum of
250mA on all inputs and outputs. This feature provides latchup
immunity beyond any potential transients at the printed circuit
board level when the devices are interfaced to industry-standard
TTL or MOS logic devices. The input/ output layout ap-
proach controls latchup without compromising performance
or packing density.
POWER DOWN
Active I
CC
supply current can be reduced from 30mA to 500μA
by applying a high TTL input on E\ and to 100μA by applying
a high CMOS input on E\. In this mode all outputs are in the
high-impedance state.
PROGRAM INHIBIT
Programming can be inhibited by maintaining high level
inputs on the E\ or the PGM\ pins.
ERASURE
Before programming, the SMJ27C010A EPROM is erased by
exposing the chip through the transparent lid to a high- inten-
sity ultraviolet light (wavelength 2537 Å). The recommended
minimum exposure dose (UV intensity x exposure time) is 15-
W
.
s/cm
2
. A typical 12-mW/cm
2
,
fi
lterless UV lamp erases the
device in 21 minutes. The lamp should be located about 2.5cm
above the chip during erasure. After erasure, all bits are in the
high state. It should be noted that normal ambient light contains
the correct wavelength for erasure; therefore, when using the
SMJ27C010A, the window should be covered with an opaque
label. After erasure (all bits in logic high state), logic lows are
programmed into the desired locations. A programmed low
can be erased only by ultraviolet light.
PROGRAM VERIFY
Programmed bits can be verified with V
PP
= 13V when G\ =
V
IL
, and E\ = V
IL
, and PGM\ = V
IH
.
SIGNATURE MODE
The signature mode provides access to a binary code
identifying the manufacturer and type. This mode is activated
when A9 (pin 26) is forced to 12V. Two identifier bytes are
accessed by toggling A0. All other addresses must be held low.
The signature code for these devices is 97D6. A0 low selects
the manufacturer’s code 97 (Hex), and A0 high
selects the
device code D6 (Hex), as shown in Table 2.
SNAP! PULSE PROGRAMMING
The SMJ27C010A is programmed by using the SNAP! Pulse
TABLE 2. SIGNATURE MODES
IDENTIFIER*
MANUFACTURER CODE
DEVICE CODE
A0
V
IL
V
IH
DQ7
1
1
DQ6
0
1
DQ5
0
0
PINS
DQ4
DQ3
1
0
1
0
DQ2
1
1
DQ1
1
1
DQ0
1
0
HEX
97
D6
* E\ = G\ = V
IL
, A1 - A8 = V
IL
, A9 = V
H
, A10 - A16 = V
IL
, V
PP
= V
CC
.
SMJ27C010A
AS27C010A
Rev. 2.6 01/10
Micross Components reserves the right to change products or specifications without notice.
3
UVEPROM
SMJ27C010A
AS27C010A
FIGURE 1. SNAP! PULSE PROGRAMMING FLOW CHART
START
Address = First Location
V
CC
= 6.5V ± 0.25V, V
PP
= 13V ± 0.25V
Program One Pulse = t
W
= 100μs
Increment Address
Program
Mode
Last
Address?
No
Yes
Address = First Location
X=0
Program One Pulse = t
W
= 100μs
No
Verify
One
Byte
Pass
Last
Address?
Fail
Increment
Address
X = X+1
X = 10?
Interactive
Mode
No
Yes
V
CC
= V
PP
= 5V ± 0.5V
Yes
Device Failed
Compare
All Bytes
to Original
Data
Pass
Device Passed
SMJ27C010A
AS27C010A
Rev. 2.6 01/10
Fail
Final
Verification
Micross Components reserves the right to change products or specifications without notice.
4
UVEPROM
SMJ27C010A
AS27C010A
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage Range, V
CC
**...........................-0.6V to +7.0V
Supply Voltage Range, V
pp
**.........................-0.6V to +14.0V
Input Voltage Range, All inputs except A9
**
..-0.6V to V
CC
+1
A9.....-0.6V to +13.5V
Output Voltage Range,
with respect to V
SS
**..................................-0.6V to V
CC
+1
Operating Free-air Temperature Range, T
A
....-55°C to 125°C
Storage Temperature Range, T
stg
.....................-65°C to 150°C
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operation
section of this specification is not implied.
Exposure to
absolute maximum rating conditions for extended periods may
affect reliability.
** All voltage values are with respect to GND.
RECOMMENDED OPERATING CONDITIONS
V
CC
V
PP
V
IH
V
IL
T
A
Supply Voltage
Supply Voltage
Read Mode
SNAP! Pulse programming algorithm
Read Mode
SNAP! Pulse programming algorithm
TTL
CMOS
TTL
CMOS
2
1
High-level DC input voltage
Low-level DC input voltage
Operating free-air temperature
MIN
4.5
6.25
V
CC
-0.6
12.75
2
V
CC
-0.2
-0.5
-0.5
-55
NOM
5
6.5
V
CC
13
MAX
5.5
6.75
V
CC
+0.6
13.25
V
CC
+0.5
V
CC
+0.5
0.8
GND+0.2
125
UNIT
V
V
V
V
V
V
V
V
°C
NOTES:
1. V
CC
must be applied before or at the same time as V
PP
and removed after or at the same time as V
PP
. The deivce must not be inserted into or removed from
the board when V
PP
or V
CC
is applied.
2. During programming, V
PP
must be maintained at 13V ± 0.25V.
ELECTRICAL CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND
OPERATING FREE-AIR TEMPERATURE
PARAMETER
V
OH
V
OL
I
I
I
O
I
PP1
I
PP2
I
CC1
High-level DC output voltage
Low-level DC output voltage
Input current (leakage)
Output current (leakage)
V
PP
supply current
V
PP
supply current (during program pulse)
V
CC
supply current (standby)
TTL-Input Level
TEST CONDITIONS
I
OH
= -20μA
I
OH
= -2.5mA
I
OL
= 2.1mA
I
OL
= 20μA
V
I
= 0V to 5.5V
V
O
= 0V to V
CC
V
PP
= V
CC
= 5.5V
V
PP
= 13V
V
CC
= 5.5V, E\=V
IH
E\=V
IL
, V
CC
=5.5V
I
CC2
V
CC
supply current (active) (output open)
t
cycle
= minimum cycle time,
outputs open
NOTES:
1. Minimum cycle time = maximum access time.
SMJ27C010A
AS27C010A
Rev. 2.6 01/10
Micross Components reserves the right to change products or specifications without notice.
MIN
V
CC
-0.2
3.5
MAX
UNIT
V
0.4
0.1
±1
±1
10
50
500
100
30
V
μA
μA
μA
mA
μA
CMOS-Input Level V
CC
= 5.5V, E\=V
CC
±0.2V
mA
1
5
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