TSM5NS50
500V N-Channel Power MOSFET
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
3. Source
TO-252
V
DS
(V)
500
R
DS(on)
(Ω)
0.8 @ V
GS
= 10V
I
D
(A)
4
Features
●
●
●
Low R
DS(on)
Low Gate Charge
Unclamped Inductive Switching (UIS) Rated
Block Diagram
Application
●
●
●
Load Switch
Ballast
Lighting
Ordering Information
Part No.
TSM5NS50CP RO
Package
TO-252
Packing
T&R
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Repetitive Avalanche Current
Energy Avalanche
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Ta = 25 C
o
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
EAS
P
D
T
J
T
J
, T
STG
Limit
500
±20
4.4
20
Unit
V
V
A
A
A
mJ
W
o
o
5
150
70
+150
-55 to +150
C
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes:
a. When mounted on 1 inch square 2oz copper clad FR-4
Symbol
RӨ
JC
RӨ
JA
Limit
1.78
62
Unit
o
o
C/W
C/W
1/6
Version: A07
TSM5NS50
500V N-Channel Power MOSFET
Electrical Specifications
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Diode Forward Voltage
Dynamic
b
a
Conditions
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
V
GS
= 10V, I
D
= 4.0A
I
S
= 4.4A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
500
2
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
0.7
1.0
13
3
6
400
120
40
6
3
50
10
250
Max
--
4
±100
1.0
0.8
1.5
--
--
--
--
--
--
--
--
--
--
00
Unit
V
V
nA
µA
Ω
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 520V, I
D
= 4.4A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-to-Drain Reverse Recovery
I
S
= 4.4A,
Time
di/dt = 100A/uS
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
V
GS
= 10V, I
D
= 4.4A,
V
DS
= 350V, R
G
= 25Ω
t
r
t
d(off)
t
f
t
r
nS
nS
2/6
Version: A07
TSM5NS50
500V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM5NS50
500V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM5NS50
500V N-Channel Power MOSFET
SOT-252 Mechanical Drawing
TO-252 DIMENSION
DIM
A
A1
B
C
D
E
F
G
G1
G2
H
I
J
K
L
M
MILLIMETERS
MIN
MAX
2.3BSC
4.6BSC
6.80
5.40
6.40
2.20
0.00
5.20
0.75
0.55
0.35
0.90
2.20
0.50
0.90
1.30
7.20
5.60
6.65
2.40
0.20
5.40
0.85
0.65
0.65
1.50
2.80
1.10
1.50
1.70
INCHES
MIN
MAX
0.09BSC
0.18BSC
0.268
0.213
0.252
0.087
0.000
0.205
0.030
0.022
0.014
0.035
0.087
0.020
0.035
0.051
0.283
0.220
0.262
0.094
0.008
0.213
0.033
0.026
0.026
0.059
0.110
0.043
0.059
0.67
5/6
Version: A07
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