TSM4414
30V N-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
30
26 @ V
GS
= 10V
40 @ V
GS
= 4.5V
SOP-8
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
I
D
(A)
8.5
5
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
●
High-Side DC/DC Conversion
Notebook
Sever
Ordering Information
Part No.
TSM4414CS RL
Package
SOP-8
Packing
T&R
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Limit
30
±20
8.5
40
1.0
Unit
V
V
A
A
A
W
o
o
Ta = 25 C
Ta = 75 C
3.0
2.1
+150
- 55 to +150
T
J
T
J
, T
STG
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
10 sec.
Symbol
RӨ
JF
RӨ
JA
Limit
25
50
Unit
o
o
C/W
C/W
1/6
Version: Preliminary
TSM4414
30V N-Channel MOSFET
Electrical Specifications
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
a
Conditions
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 24V, V
GS
= 0V
V
DS
≥
5V, V
GS
= 10V
V
GS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, I
D
= 5A
V
DS
= 5V, I
D
= 5A
I
S
= 1A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
30
1
--
--
30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
1.4
--
--
--
20
30
20
0.76
4.52
1.24
1.68
400.96
100.47
71.82
7.42
3.41
20.4
3.01
Max
--
3
±100
1.0
--
26
40
--
1.0
--
--
--
--
--
--
--
--
--
--
Unit
V
V
nA
µA
A
mΩ
S
V
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 15V, I
D
= 8.5A,
V
GS
= 10V
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= 15V, R
L
= 2.2Ω,
I
D
= 1A, V
GEN
= 10V,
nS
R
G
= 6Ω
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: Preliminary
TSM4414
30V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: Preliminary
TSM4414
30V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: Preliminary
TSM4414
30V N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
5/6
Version: Preliminary
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
