TSM3911D
20V Dual P-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
140 @ V
GS
= -4.5V
-20
200 @ V
GS
= -2.5V
300 @ V
GS
= -1.8V
SOT-26
Pin Definition:
1. Gate 1
6. Drain 1
2. Source 2 5, Source 1
3. Gate 2
4. Drain 2
I
D
(A)
-2.2
-1.8
-1.5
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM3911DCX6 RF
Package
SOT-26
Packing
T&R
Dual P-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Limit
-20
±8
-2.2
-8
-0.72
Unit
V
V
A
A
A
W
o
o
Ta = 25 C
Ta = 70 C
1.15
0.73
+150
- 55 to +150
T
J
T
J
, T
STG
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
Symbol
RӨ
JF
RӨ
JA
Limit
30
80
Unit
o
o
C/W
C/W
1/6
Version: A07
TSM3911D
20V Dual P-Channel MOSFET
Electrical Specifications
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Conditions
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= ±8V, V
DS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
=-5V, V
GS
= -5V
V
GS
= -4.5V, I
D
= -2.2A
a
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
-20
-0.45
--
--
-5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
115
163
220
5
- 0.8
15.23
5.49
2.74
882.51
145.54
97.26
17.28
3.73
36.05
6.19
Max
--
-0.95
±100
-1.0
--
140
200
300
--
-1.2
--
--
--
--
--
--
--
--
--
--
Unit
V
V
nA
µA
A
mΩ
S
V
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
V
GS
= -2.5V, I
D
= -1.8A
V
GS
= -1.8V, I
D
= -1A
V
DS
= -5V, I
D
= -2.2A
I
S
= -1.05A, V
GS
= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= -6V, I
D
= -2.8A,
V
GS
= -4.5V
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= -6V, R
L
= 6Ω,
I
D
= -1A, V
GEN
= -4.5V,
nS
R
G
= 6Ω
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: A07
TSM3911D
20V Dual P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM3911D
20V Dual P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM3911D
20V Dual P-Channel MOSFET
SOT-26 Mechanical Drawing
DIM
A
B
C
D
E
F
H
L
SOT-26 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
2.70
0.25
3.00
0.50
0.106
0.010
0.118
0.020
1.90(typ)
0.95(typ)
1.50
1.05
2.60
1.70
1.35
3.00
0.075(typ)
0.037(typ)
0.059
0.041
0.102
0.067
0.053
0.118
0.60(typ)
0.024(typ)
5/6
Version: A07
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
