TSM25N03
25V N-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
25
14 @ V
GS
= 10V
19 @ V
GS
= 4.5V
TO-252
Pin Definition:
1. Gate
2. Drain
3. Source
I
D
(A)
25
25
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
Dc-DC Converters and Motors Drivers
Ordering Information
Part No.
TSM25N03CP RO
Package
TO-252
Packing
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
EAS
o
o
Limit
25
±20
25
100
20
45
60
23
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
o
o
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25Ω)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Ta = 25 C
Ta = 70 C
P
D
T
J
T
J
, T
STG
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t
≤
10 sec.
Symbol
T
L
RӨ
JC
RӨ
JA
Limit
10
1.8
40
Unit
S
o
o
C/W
C/W
1/6
Version: A07
TSM25N03
25V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250uA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 25V, V
GS
= 0V
V
DS
≥5V,
V
GS
= 10V
V
GS
= 4.5V, I
D
= 25A
V
GS
= 10V, I
D
= 25A
V
DS
= 15V, I
D
= 15A
I
S
= 20A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
25
1.0
--
--
25
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
1.9
--
--
--
14.5
9.5
12
0.87
14.7
2.5
3
921
208.7
108.2
20.2
5.9
49.5
16.7
Max
--
3.0
±100
1.0
--
19
14
--
1.5
26
--
--
--
--
--
--
--
--
--
Unit
V
V
nA
uA
A
mΩ
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 15V, I
D
= 25A,
V
GS
= 10V
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= 15V, R
L
= 15Ω,
I
D
= 1A, V
GEN
= 10V,
R
G
= 16Ω
nS
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: A07
TSM25N03
25V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM25N03
25V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM25N03
25V N-Channel MOSFET
SOT-252 Mechanical Drawing
TO-252 DIMENSION
DIM
A
A1
B
C
D
E
F
G
G1
G2
H
I
J
K
L
M
MILLIMETERS
MIN
MAX
2.3BSC
4.6BSC
6.80
5.40
6.40
2.20
0.00
5.20
0.75
0.55
0.35
0.90
2.20
0.50
0.90
1.30
7.20
5.60
6.65
2.40
0.20
5.40
0.85
0.65
0.65
1.50
2.80
1.10
1.50
1.70
INCHES
MIN
MAX
0.09BSC
0.18BSC
0.268
0.213
0.252
0.087
0.000
0.205
0.030
0.022
0.014
0.035
0.087
0.020
0.035
0.051
0.283
0.220
0.262
0.094
0.008
0.213
0.033
0.026
0.026
0.059
0.110
0.043
0.059
0.67
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/6
Version: A07
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