TSM2323
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
39 @ V
GS
= -4.5V
-20
52 @ V
GS
= -2.5V
68 @ V
GS
= -1.8V
I
D
(A)
-4.7
-4.1
-2.0
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
P-Channel MOSFET
Ordering Information
Part No.
TSM2323CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Limit
-20
±8
-4.7
-20
-1.0
1.25
0.8
+150
- 55 to +150
Unit
V
V
A
A
A
W
o
o
Ta = 25 C
Ta = 70 C
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RӨ
JC
RӨ
JA
Limit
75
250
Unit
o
o
C/W
C/W
1/6
Version: A07
TSM2323
20V P-Channel MOSFET
Electrical Specifications
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= - 250uA
V
DS
= V
GS
, I
D
= - 250uA
V
DS
= -16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
≤-5V,
V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -4.7A
V
GS
= -2.5V, I
D
= -4.1A
V
GS
= -1.8V, I
D
= -2.0A
V
DS
= - 5V, I
D
= - 4.7A
I
S
= - 1.0A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
DSS
I
GSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
-20
-0.4
--
--
-20
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
31
41
54
16
- 0.7
12.5
1.7
3.3
1020
191
140
25
43
71
48
Max
--
-1.0
-1.0
±100
--
39
52
68
--
-1.2
19
--
--
--
--
--
40
65
110
75
Unit
V
V
uA
nA
A
mΩ
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
C
V
DS
= -10V, I
D
= -4.7A,
V
GS
= -4.5V
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= -10V, R
L
= 10Ω,
I
D
= -1A, V
GEN
= -4.5V,
nS
R
G
= 6Ω
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: A07
TSM2323
20V P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM2323
20V P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM2323
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
B
C
D
E
F
G
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
2.88
2.91
0.113
0.115
0.39
0.42
0.015
0.017
1.78
2.03
0.070
0.080
0.51
0.61
0.020
0.024
1.59
1.66
0.063
0.065
1.04
1.08
0.041
0.043
0.07
0.09
0.003
0.004
Marking Diagram
23
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/6
Version: A07
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