Ultra-Fast-Recovery Rectifier Diode
FMXJ-2164S
■Package---TO220F
■General
Description
FMXJ-2164S employs JBS structure*, i.e. the combined
structure of SBD and FRD.
In addition, together with our proprietary lifetime
control technology, Ultra fast recovery, Low loss and
Low noise are realized.
* JBS
(Junction Barrier Schottky)
structure.
September, 2005
■Applications
●PDP
Panel driver circuit
●PFC
Circuit (For continuous mode)
●The
output rectifier for SMPS, UPS and DC-DC
Converter.
●The
flywheel diode for an inverter and a chopper.
■Key
Specifications
Absolute maximum ratings
Parameter
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
Symbol
VRSM
VRM
IF(AV)
IFSM
Unit
Ｖ
Ｖ
Ａ
Ａ
Rating
400
400
16
100
Electrical characteristics
■Features
●
Realizes the fastest recovery characteristics (Ultrafast
recovery) in the world, in all temperature ranges, and
realizes the low loss and the low noise.
●
Contributes to EMI-filter downsizing by soft Reverse
Recovery.
Parameter
Symbol
VF
IR
H
·
IR
Unit
V
μA
Value
1.40
max.
100
max.
20
max.
18
max.
Conditions
IF=8.0A (one
chip)
VR=VRM
VR=VRM,
Tj=150
°C
IF=IRP=500mA
90% Recovery
point, T
j
=25
°C
Forward Voltage Drop
Reverse Leakage
Current
Reverse Leakage
Current Under High
Temperature
Reverse Recovery Time
mA
Actual circuit waveform (typical)
FMX series (Conventional)
trr
ns
FMXJ series (New)
IRP
IRP
Low-IRP & Soft-trr
Horiz:40ns/div
Vert:2A/div
Horiz:40ns/div
Vert:2A/div
Conditions: FCC 160kHz Load 5A (DC12V)
Sanken Electric Co.,Ltd
.
http://www.sanken-ele.co.jp/en/
1/8
D01-001EA-050912
Ultra-Fast-Recovery Rectifier Diode
FMXJ-2164S
Die-Structure
:
Silicone-Planer-Diode by Diffusion
§1.
Absolute maximum ratings & Electrical characteristics
September, 2005
1-1 Absolute maximum ratings
No.
1
2
3
4
5
6
7
Item
Symbol
Unit
Rating
Conditions
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
VRSM
VRM
IF(AV)
IFSM
I
2
t
Tj
Tstg
V
V
A
A
A
2
S
°C
°C
400
400
16
100
50
-40 ~ +150
-40 ~ +150
Refer to Derating of 5
10msec. Half sinewave, one shot
1msec
≤
t
≤
10msec
No.1,2,4&5 show ratings per one chip
1-2
No.
1
2
3
4
5
Electrical characteristics (Ta=25°C ,unless otherwise specified)
Item
Symbol
Unit
Rating
Conditions
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current Under
High Temperature
Reverse Recovery Time
VF
IR
H·IR
trr
V
μA
mA
ns
1.40 max.
100
20
18
4.0
max.
max.
max.
max.
IF=8.0A
VR=VRM
VR=VRM, Tj=150°C
IF=IRP=500mA
90% Recovery point, T
j
=25°C
Between Junction and case
Thermal Resistance
Rth(j-c)
°C/W
No.1,2&3 show characteristics per one chip.
Sanken Electric Co.,Ltd
.
D01-001EA-050912
2/8
Ultra-Fast-Recovery Rectifier Diode
FMXJ-2164S
§2.
Package information
September, 2005
2-1
Package type, physical dimensions and material
10.0
4.2
2.8
C 0.5
φ .3
3
4.0
8.4
16.9
0.8
3.9
(13.5)
※1
*1
※2
*2
※3
2.6
1.35
0.85
2.54
2.54
0.45
指 示 な き 公 差 ± 0.2
tolerance － ±0.2
Dimensions in mm
2-2
Marking
Marking
Type Name
Type Name
Polarity
Lot number
1st letter: Last digit of year
FMXJ-2164S
XJ2164
2nd letter: Month From 1 to 9 for Jan. to Sep.,
O for Oct., N for Nov., D for Dec
.
3rd & 4th letter: Day
ex. 5208 (February 8, 2005)
Sanken Electric Co.,Ltd
.
D01-001EA-050912
3/8
Ultra-Fast-Recovery Rectifier Diode
FMXJ-2164S
§3.
Characteristics
I
F(AV)
- P
F
35
September, 2005
Tj=150°C
30
Forward Power Dissipation (W)
t/T=1/6
25
20
t
T
t/T=1/3 , Sinewave
t/T=1/2
15
10
5
0
0
2
4
6
8
10
12
14
16
DC
Average Forward Current (A)
14
V
R
- P
R
Tj=150°C
12
Reverse Power Dissipation (W)
10
8
t
T
1-t/T=5/6
1-t/T=2/3
6
1-t/T=1/2
4
2
0
0
50
100
150
200
250
300
350
400
Reverse Voltage (V)
Sinewave
Sanken Electric Co.,Ltd
.
D01-001EA-050912
4/8
Ultra-Fast-Recovery Rectifier Diode
FMXJ-2164S
§4.
Derating
T
c
- I
F(AV)
16
14
DC
Average Forward Current (A)
September, 2005
V
R
=0 (V)
12
t/T=1/2
10
t/T=1/3 , Sinewave
8
t/T=1/6
6
Tj=150°C
4
2
0
25
50
75
100
125
150
t
T
Case Temperature (°C)
T
c
- I
F(AV)
16
14
D.C.
Average Forward Current (A)
V
R
=400 (V)
12
,Sinewave
10
8
t/T=1/6
6
Tj=150°C
4
t/T=1/3
t/T=1/2
2
0
25
t
T
50
75
100
125
150
Case Temperature (°C)
Sanken Electric Co.,Ltd
.
D01-001EA-050912
5/8
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