AUTOMOTIVE GRADE
PD - 96375
AUIRFP064N
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Features
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
R
DS(on)
max.
55V
0.008Ω
110A
g
G
S
I
D
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
G
D
S
TO-247AC
G
D
S
G a te
D r a in
S o u rce
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Max.
110
g
80
g
390
200
1.3
± 20
480
59
20
5.0
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Peak Diode Recovery dv/dt
e
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Ã
d
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.75
–––
40
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11
AUIRFP064N
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
2.0
42
–––
–––
–––
–––
–––
–––
0.057 –––
––– 0.008
–––
4.0
–––
–––
–––
25
–––
250
–––
–––
100
-100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
Ω
V
GS
= 10V, I
D
= 59A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 59A
V
DS
= 55V, V
GS
= 0V
μA
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
f
f
nA
V
GS
= 20V
V
GS
= -20V
I
D
= 59A
V
DS
= 44V
V
GS
= 10V,See Fig.6 and 13
V
DD
= 28V
I
D
= 59A
R
G
= 2.5Ω
R
D
= 0.39Ω,See Fig.10
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
100
43
70
5.0
13
4000
1300
480
170
32
74
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
nC
f
ns
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,See Fig.5
f
D
G
S
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
110
450
110
g
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 59A, V
GS
= 0V
T
J
= 25°C, I
F
= 59A
di/dt = 100A/μs
A
Ã
390
1.3
170
680
V
ns
nC
f
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
V
DD
= 25V, starting T
J
= 25°C, L = 190μH,
R
G
= 25Ω, I
AS
= 59A.(See Figure 12)
I
SD
≤
59A, di/dt
≤
290A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refere to Desing Tip # 93-4
2
www.irf.com
AUIRFP064N
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
3L-TO-247
N/A
Class M4(+/- 800V )
(per AEC-Q101-002)
Class H1B(+/- 4000V )
(per AEC-Q101-001)
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†††
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
†††
†††
†
††
†††
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
www.irf.com
3
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