AUTOMOTIVE GRADE
Features
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AUIRLS4030
AUIRLSL4030
HEXFET
®
Power MOSFET
D
Optimized for Logic Level Drive
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
100V
3.4mΩ
4.3m
Ω
180A
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Base Part Number
AUIRLS4030
AUIRLSL4030
Package Type
D2-Pak
TO-262 Pak
Description
G
S
D
S
D
G
TO-262
AUIRLSL4030
D
2
Pak
AUIRLS4030
G
D
S
Gate
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Tube
Drain
Source
Quantity
50
800
800
50
Orderable Part Number
AUIRLS4030
AUIRLS4030TRL
AUIRLS4030TRR
AUIRLSL4030
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;
and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b,
21
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
c
d
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
e
c
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount) , D
2
Pak
ik
Parameter
Typ.
Max.
0.40
40
Units
°C/W
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
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©
2014 International Rectifier
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April 10, 2014
AUIRLS4030/AUIRLSL4030
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
gfs
I
DSS
I
GSS
R
G(int)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
100
–––
–––
–––
1.0
320
–––
–––
–––
–––
–––
Conditions
–––
0.10
3.4
3.6
–––
–––
–––
–––
–––
–––
2.1
–––
–––
4.3
4.5
2.5
–––
20
250
100
-100
–––
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 110A
V
GS
= 4.5V, I
D
= 92A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 110A
V
DS
= 100V, V
GS
= 0V
μA
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
nA
V
GS
= -16V
f
f
Ω
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
87
130
–––
27
–––
–––
45
–––
–––
42
–––
–––
74
–––
––– 330 –––
––– 110 –––
––– 170 –––
––– 11360 –––
––– 670 –––
––– 290 –––
––– 760 –––
––– 1140 –––
nC
Conditions
I
D
= 110A
V
DS
= 50V
V
GS
= 4.5V
I
D
= 110A, V
DS
=0V, V
GS
= 4.5V
V
DD
= 65V
I
D
= 110A
R
G
= 2.7Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
f
f
ns
pF
h
g
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
180
A
730
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
50
–––
ns
–––
60
–––
–––
88
–––
nC
T
J
= 125°C
––– 130 –––
–––
3.3
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 110A, V
GS
= 0V
T
J
= 25°C
V
R
= 85V,
T
J
= 125°C
I
F
= 110A
di/dt = 100A/μs
T
J
= 25°C
f
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.05mH, R
G
= 25Ω,
I
AS
= 110A, V
GS
=10V. Part not recommended for use above
this value .
I
SD
≤
110A, di/dt
≤
1330A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
R
θJC
value shown is at time zero.
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April 10, 2014
AUIRLS4030/AUIRLSL4030
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
2.5V
10
2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.5
ID = 110A
V GS = 10V
ID, Drain-to-Source Current (A)
2.0
100
TJ = 175°C
TJ = 25°C
1.5
1.0
10
0.5
V DS = 50V
1.0
1
2
≤
60μs PULSE WIDTH
3
4
5
0.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
V GS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
5.0
ID= 110A
V GS, Gate-to-Source Voltage (V)
V DS= 80V
V DS= 50V
4.0
C, Capacitance (pF)
10000
Ciss
3.0
Coss
1000
Crss
2.0
1.0
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0.0
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRLS4030/AUIRLSL4030
1000
TJ = 175°C
100
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
10msec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
1000
DC
10
TJ = 25°C
1
V GS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
V SD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
200
180
160
ID, Drain Current (A)
V (BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
4.5
4.0
3.5
3.0
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1400
1200
1000
800
600
400
200
0
ID
TOP
17A
40A
BOTTOM 110A
Energy (μJ)
2.5
2.0
1.5
1.0
0.5
0.0
-20
0
20
40
60
80
100
120
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
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VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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April 10, 2014
AUIRLS4030/AUIRLSL4030
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.0477 0.000071
0.1631 0.000881
0.1893 0.007457
τ
1
τ
2
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
350
300
EAR , Avalanche Energy (mJ)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 110A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
ΔT
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
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April 10, 2014
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