SIPMOS
®
Power Transistor
BUZ 31L
H
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
. Halogen-free according to IEC61249-2-21
Pin 1
Pin 2
Pin 3
G
Type
D
Pb-free
S
V
DS
I
D
R
DS(on
)
Package
BUZ 31 L
H
200 V
13.5 A
0.2
Ω
PG-TO220-3
Yes
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
D
13.5
A
T
C
= 28 ˚C
Pulsed drain current
I
Dpuls
54
T
C
= 25 ˚C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
13.5
9
mJ
I
D
= 13.5 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 1.65 mH,
T
j
= 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
200
V
GS
±
20
Class 1
V
P
tot
95
W
T
C
= 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
≤
1.32
75
K/W
E
55 / 150 / 56
Rev. 2.4
Page 1
2009-11-10
BUZ 31L
H
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Values
typ.
max.
Unit
Drain- source breakdown voltage
V
(BR)DSS
200
-
-
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 ˚C
Gate threshold voltage
V
GS(th)
1.2
1.6
2
µA
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
0.1
1
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 125 ˚C
Gate-source leakage current
-
10
100
nA
I
GSS
-
10
100
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
R
DS(on)
-
0.16
0.2
Ω
V
GS
= 5 V,
I
D
= 7 A
Rev. 2.4
Page 2
2009-11-10
BUZ 31L
H
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
g
fs
5
12
-
S
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 7 A
Input capacitance
C
iss
-
1200
1600
pF
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
C
oss
-
200
300
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
100
150
ns
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
Ω
Rise time
-
25
40
t
r
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
Ω
Turn-off delay time
-
80
120
t
d(off)
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
Ω
Fall time
-
210
270
t
f
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
Ω
-
65
85
Rev. 2.4
Page 3
2009-11-10
BUZ 31L
H
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
I
S
-
-
13.5
A
T
C
= 25 ˚C
Inverse diode direct current,pulsed
I
SM
-
-
54
V
T
C
= 25 ˚C
Inverse diode forward voltage
V
SD
-
1.2
1.6
V
GS
= 0 V,
I
F
= 27 A
Reverse recovery time
t
rr
-
180
-
ns
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
Q
rr
-
1.2
-
µC
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Rev. 2.4
Page 4
2009-11-10
BUZ 31L
H
Power dissipation
P
tot
=
ƒ
(T
C
)
Drain current
I
D
=
ƒ
(T
C
)
parameter:
V
GS
≥
5 V
14
100
W
A
12
P
tot
80
I
D
11
70
10
9
60
8
50
7
40
6
5
30
4
20
3
2
10
0
0
1
0
20
40
60
80
100
120
˚C
160
0
20
40
60
80
100
120
˚C
160
T
C
T
C
Safe operating area
I
D
=
ƒ
(V
DS
)
parameter:
D
= 0.01,
T
C
= 25˚C
10
2
tp
= 15.0µs
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
1
A
I
D
R
10
1
DS
V
DS
/I
D
K/W
100 µs
Z
thJC
10
0
(o
n)
=
1 ms
10
-1
D = 0.50
10 ms
0.20
10
0
0.10
10
-2
0.05
DC
0.02
0.01
single pulse
10
-1
0
10
10
1
10
2
V
10
-3
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
Rev. 2.4
Page 5
2009-11-10
测试/测量
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