Ordering number : ENA1655B
SMP3003
SANYO Semiconductors
DATA SHEET
SMP3003
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ON-resistance RDS(on)1=6.2m
Ω
(typ.)
Input capacitance Ciss=13400pF (typ.)
4V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--75
±20
--100
-
-400
90
150
--55 to +150
468
--60
Unit
V
V
A
A
W
°C
°C
mJ
A
Note :
*1
VDD=--48V, L=100
μ
H, IAV=-
-60A (Fig.1)
*2
L
≤
100
μ
H, Single pulse
Package Dimensions
unit : mm (typ)
7535-001
SMP3003-1E
10.0
4
1.2
4.5
1.3
8.0
1.75
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
MP3003
7.9
9.2
13.4
5.3
0.9
DL
LOT No.
3.0
1.4
0.254
1
2 3
1.27
0.8
2.54
2.54
2.4
0.5
1.35
Electrical Connection
2, 4
0 to 0.25
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TO-263-2L
1
3
http://semicon.sanyo.com/en/network
53012 TKIM TC-00002772/O1211 TKIM TC-00002654/21710QA TKIM TC-00002253 No. A1655-1/7
SMP3003
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=--100A, VGS=0V
See Fig.3
IS=--100A, VGS=0V, di/dt=--100A/μs
VDS=--48V, VGS=--10V, ID=--100A
VDS=--20V, f=1MHz
Conditions
ID=--1mA, VGS=0V
VDS=--75V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--50A
ID=--50A, VGS=--10V
ID=--50A, VGS=--4V
Ratings
min
--75
-
-10
±10
--1.2
140
6.2
8.0
13400
1000
740
95
See Fig.2
1000
800
820
280
50
55
--1.0
120
380
--1.5
8.0
11
-
-2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
VIN
VDD= --48V
L
≥50Ω
RG
0V
--10V
VIN
SMP3003
PW=10μs
D.C.≤1%
G
D
ID= --50A
RL=0.96Ω
VOUT
0V
--10V
50Ω
VDD
P.G
SMP3003
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
SMP3003
D
L
G
S
VDD
Driver MOSFET
No. A1655-2/7
SMP3003
Ordering Information
Device
SMP3003-DL-1E
Package
TO-263-2L
Shipping
800pcs./reel
memo
Pb Free
--200
--180
ID -- VDS
--8
V
Tc=25
°
C
--200
ID -- VGS
Tc= --2
5
°
C
--1.5
--2.0
--2.5
--6
V
Drain Current, ID -- A
--1
--160
--140
--120
--100
--80
--60
--40
--20
0
0
--0.2
--0.4
--0.6
--160
Drain Current, ID -- A
--140
--120
--100
--80
--20
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
0
--0.5
--1.0
25
°
C
VGS= --3V
--40
Tc=
75
°
C
--25
°
C
--60
--3.0
--3.5
--4.0
25
°
C
--4.5
0V
--4V
--180
75
°
C
VDS= --10V
--5.0
Drain-to-Source Voltage, VDS -- V
20
RDS(on) -- VGS
IT16499
20
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT16500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
18
16
14
12
10
8
6
4
2
0
0
--1
--2
--3
--4
--5
--6
--7
ID= --50A
Single pulse
Single pulse
18
16
14
12
10
8
6
4
2
0
--50
--25
0
25
50
75
100
125
150
Tc=75
°
C
25
°
C
--25
°
C
50A
= --
ID
A
4V,
--50
= --
I
D=
S
VG
0V,
= --1
VGS
--8
--9
--10
Gate-to-Source Voltage, VGS -- V
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
|
y
fs
|
-- ID
IT16501
--1000
7
5
3
2
Case Temperature, Tc --
°
C
IS -- VSD
IT16502
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS= --10V
VGS=0V
Single pulse
°
C
25
°
C
--25
Tc=
C
75
°
Source Current, IS -- A
--100
7
5
3
2
--10
7
5
3
2
5 7 --100
IT16503
--0.1
7
5
3
2
--0.01
0
--0.2
--0.4
Tc=7
5
°
C
25
°
C
--25
°
C
--0.6
--0.8
--1.0
7
5
3
2
--1.0
--1.2
--1.4
IT16504
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
No. A1655-3/7
SMP3003
3
2
SW Time -- ID
td (off)
VDD= --48V
VGS= --10V
100000
7
5
3
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time -- ns
7
5
3
2
tf
Ciss, Coss, Crss -- pF
1000
2
Ciss
10000
7
5
3
2
1000
7
5
Coss
tr
Crss
100
7
5
--0.1
2
3
5 7 --1.0
td(on)
2
3
5 7 --10
2
3
5 7 --100
IT15359
3
2
100
0
--5
--10
--15
--20
--25
--30
IT16505
Drain Current, ID -- A
--10
--9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
--1000
7
5
3
2
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --48V
ID= --100A
IDP= --400A(PW≤10μs)
--8
--7
--6
--5
--4
--3
--2
--1
0
0
50
100
150
200
250
300
350
IT16506
10
ID= --100A
Drain Current, ID -- A
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
Operation in
this area is
limited by RDS(on).
1m
10
s
m
DC
100m
s
op
s
era
tio
n
0
μ
s
10
μ
s
--0.1
--0.1
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
100
PD -- Tc
Drain-to-Source Voltage, VDS -- V
120
EAS -- Ta
5 7--100 2
IT15360
Allowable Power Dissipation, PD -- W
Avalanche Energy derating factor -- %
0
20
40
60
80
100
120
140
160
90
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT14184
Case Temperature, Tc --
°C
IT15361
Ambient Temperature, Ta --
°C
No. A1655-4/7
SMP3003
Taping Specification
SMP3003-DL-1E
No. A1655-5/7
嵌入式系统
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