NTMFS5844NL,
NVMFS5844NL
Power MOSFET
Features
60 V, 61 A, 12 mW, Single N−Channel
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5844NLWF
−
Wettable Flanks Product
NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 3,
4)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
"20
61
43
107
54
11.2
8.0
3.7
1.8
247
80
−55
to
175
60
48
A
A
°C
A
mJ
W
1
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V
(BR)DSS
60 V
R
DS(ON)
MAX
12 mW @ 10 V
16 mW @ 4.5 V
D (5)
I
D
MAX
61 A
Unit
V
V
A
G (4)
W
A
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Current Limited by Package
(Note 4)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 31 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Assembly Location
= Year
= Work Week
= Lot Traceability
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Mounting Board (top)
−
Steady
State (Notes 2, 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
1.4
41
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 5
1
Publication Order Number:
NTMFS5844NL/D
NTMFS5844NL, NVMFS5844NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 48 V; I
D
= 10 A
V
GS
= 10 V, V
DS
= 48 V; I
D
= 10 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.79
0.65
19
13
6.0
15
nC
ns
1.2
V
12
25
20
10
ns
1460
150
96
30
15
1.0
4.0
8.0
3.0
0.62
V
W
nC
pF
I
D
= 10 A
I
D
= 10 A
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
57
1
100
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
6.2
10.2
13
27
2.3
V
mV/°C
12
16
mW
S
V
DS
= 5 V, I
D
= 10 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5844NL, NVMFS5844NL
TYPICAL CHARACTERISTICS
80
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
1
2
3
3.4 V
3.2 V
3.0 V
2.8 V
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10 V
80
4.0 V
3.8 V
3.6 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
1
T
J
= 25°C
T
J
= 125°C
2
3
T
J
=
−55°C
4
5
V
DS
≥
10 V
V
GS
= 5 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
I
D
= 10 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.016
Figure 2. Transfer Characteristics
T
J
= 25°C
0.014
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.010
2
4
6
8
10
12
0.008
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
V
GS
= 10 V
I
D
= 10 A
I
DSS
, LEAKAGE (nA)
2
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1.5
1,000
1
T
J
= 125°C
0.5
−50
−25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS5844NL, NVMFS5844NL
TYPICAL CHARACTERISTICS
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
C
oss
C
rss
10
20
30
40
50
60
DRAIN−TO−SOURCE VOLTAGE (V)
C
iss
V
GS
= 0 V
T
J
= 25°C
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8
6
4
Q
gs
2
0
Q
T
Q
gd
V
DS
= 48 V
I
D
= 10 A
T
J
= 25°C
0
5
10
15
20
25
30
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
40
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 48 V
I
D
= 10 A
V
GS
= 4.5 V
100
t, TIME (ns)
t
f
t
d(on)
t
d(off)
30
V
GS
= 0 V
T
J
= 25°C
t
r
10
20
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
V
GS
= 10 V
Single Pulse
T
C
= 25°C
100
ms
1 ms
10 ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
V
DS
, DRAISN VOLTAGE (V)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
50
40
30
20
10
0
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
ms
10
dc
0.1
100
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTMFS5844NL, NVMFS5844NL
TYPICAL CHARACTERISTICS
R
qJA(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
1
0.05
0.02
0.01
0.1
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NTMFS5844NLT1G
NVMFS5844NLT1G
NVMFS5844NLWFT1G
NVMFS5844NLT3G
NVMFS5844NLWFT3G
Marking
5844NL
V5844L
5844LW
V5844L
5844LW
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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