NLAST44599
Low Voltage Single Supply
Dual DPDT Analog Switch
The NLAST44599 is an advanced CMOS dual−independent
DPDT (double pole−double throw) analog switch, fabricated with
silicon gate CMOS technology. It achieves high−speed propagation
delays and low ON resistances while maintaining CMOS low−power
dissipation. This DPDT controls analog and digital voltages that may
vary across the full power−supply range (from V
CC
to GND).
The device has been designed so the ON resistance (R
ON
) is much
lower and more linear over input voltage than R
ON
of typical CMOS
analog switches.
The channel−select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage
−
input/output voltage mismatch, battery backup,
hot insertion, etc.
The NLAST44599 can also be used as a quad 2−to−1 multiplexer−
demultiplexer analog switch with two Select pins that each controls
two multiplexer−demultiplexers.
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MARKING
DIAGRAMS
16
1
QFN−16
MN SUFFIX
CASE 485G
T
ALYWG
G
16
16
1
TSSOP−16
DT SUFFIX
CASE 948F
1
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
NLAT
4459
ALYWG
G
•
•
•
•
•
•
•
•
•
Select Pins Compatible with TTL Levels
Channel Select Input Overvoltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: I
CC
= 2
mA
(Max) at T
A
= 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
(Note: Microdot may be in either location)
ESD Performance: Human Body Model > 2000 V;
Machine Model > 100 V
•
Chip Complexity: 158 FETs
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
•
Pb−Free Packages are Available
©
Semiconductor Components Industries, LLC, 2010
November, 2010
−
Rev. 9
1
Publication Order Number:
NLAST44599/D
NLAST44599
QFN−16 PACKAGE
COM A
NO A
0
NC D
1
V
CC
FUNCTION TABLE
Select AB or CD
L
H
ON Channel
NC to COM
NO to COM
16
15
14
13
12
NC A
1
SAB
COM D
1
See TSSOP−16
Switch Configuration
2
11
10
NO D
0
SCD
NO B
0
COM B
3
NC C
1
4
9
COM C
NC B1
GND
NO C
0
0
1
2
COM A
0/1
NO A
0
1
16
V
CC
COM B
SELECT CD
2/3
X1
3
0
1
2
COM C
NC A
1
3
14
COM D
COM D
ELECT AB
4
13
NO D0
0/1
2/3
3
Figure 2. IEC Logic Symbol
NO B
0
5
12
SELECT CD
COM B
6
11
NC C
1
NC B
1
7
10
COM C
GND
8
9
NO C
0
Figure 1. Logic Diagram
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2
U
COM A
2
15
NC D1
U
U
U
U
U
U
U
U
TSSOP−16 PACKAGE
U
U
U
8
SELECT AB
X1
NO A
0
NC A
1
NO B
0
NC B
1
NO C
0
NC C
1
NO D
0
NC D
1
7
6
5
NLAST44599
MAXIMUM RATINGS
Symbol
V
CC
V
IS
V
IN
I
IK
P
D
T
STG
T
L
T
J
MSL
F
R
V
ESD
Positive DC Supply Voltage
Analog Input Voltage (V
NO
or V
COM
)
Digital Select Input Voltage
DC Current, Into or Out of Any Pin
Power Dissipation in Still Air
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 30%
−
35%
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
Above V
CC
and Below GND at 125°C (Note 4)
QFN−16
TSSOP−16
QFN−16
TSSOP−16
Parameter
Value
*0.5
to
)7.0
*0.5
≤
V
IS
≤
V
CC
)0.5
*0.5
≤
V
I
≤
)7.0
$50
800
450
*65
to
)150
260
+150
Level 1
UL−94−VO (0.125 in)
2000
100
1000
$300
80
164
V
Unit
V
V
V
mA
mW
°C
°C
°C
I
LATCH−UP
q
JA
Latch−Up Performance
Thermal Resistance
mA
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
IS
T
A
t
r
, t
f
DC Supply Voltage
Digital Select Input Voltage
Analog Input Voltage (NC, NO, COM)
Operating Temperature Range
Input Rise or Fall Time, SELECT
V
CC
= 3.3 V
$
0.3 V
V
CC
= 5.0 V
$
0.5 V
Parameter
Min
2.0
GND
GND
*55
0
0
Max
5.5
5.5
V
CC
)125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
80
90
100
110
120
130
140
NORMALIZED FAILURE RATE
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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3
NLAST44599
DC CHARACTERISTICS
−
Digital Section
(Voltages Referenced to GND)
Guaranteed Limit
Symbol
V
IH
Parameter
Minimum High−Level Input
Voltage, Select Inputs
Maximum Low−Level Input
Voltage, Select Inputs
Maximum Input Leakage
Current
Power Off Leakage Current,
Select Inputs
Maximum Quiescent Supply
Current
V
IN
= 5.5 V or GND
V
IN
= 5.5 V or GND
Select and V
IS
= V
CC
or GND
Condition
V
CC
3.0
4.5
5.5
3.0
4.5
5.5
5.5
0
5.5
*555C
to 255C
2.0
2.0
2.0
0.5
0.8
0.8
$0.2
$10
4.0
t855C
2.0
2.0
2.0
0.5
0.8
0.8
$2.0
$10
4.0
t1255C
2.0
2.0
2.0
0.5
0.8
0.8
$2.0
$10
8.0
Unit
V
V
IL
V
I
IN
I
OFF
I
CC
mA
mA
mA
DC ELECTRICAL CHARACTERISTICS
−
Analog Section
Guaranteed Limit
Symbol
R
ON
Parameter
Maximum “ON” Resistance
(Figures 17
−
23)
Condition
V
IN
= V
IL
or V
IH
V
IS
= GND to V
CC
I
IN
I
v
10.0 mA
V
IN
= V
IL
or V
IH
I
IN
I
v10.0
mA
V
IS
= 1 V, 2 V, 3.5 V
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 1.0 V
COM
4.5 V
V
IN
= V
IL
or V
IH
V
NO
1.0 V or 4.5 V with V
NC
floating or
V
NO
1.0 V or 4.5 V with V
NO
floating
V
COM
= 1.0 V or 4.5 V
V
CC
2.5
3.0
4.5
5.5
4.5
*555C
to 255C
85
45
30
25
4
t855C
95
50
35
30
4
t1255C
105
55
40
35
5
Unit
W
R
FLAT
(ON)
I
NC(OFF)
I
NO(OFF)
I
COM(ON)
ON Resistance Flatness
(Figures 17
−
23)
NO or NC Off Leakage
Current (Figure 9)
COM ON Leakage Current
(Figure 9)
W
5.5
5.5
1
1
10
10
100
100
nA
nA
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4
NLAST44599
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Maximum Limit
V
CC
Symbol
t
ON
Parameter
Turn−On Time
(Figures 12 and 13)
Test Conditions
R
L
= 300
W,
C
L
= 35 pF
(Figures 5 and 6)
(V)
2.5
3.0
4.5
5.5
2.5
3.0
4.5
5.5
2.5
3.0
4.5
5.5
V
IS
(V)
2.0
2.0
3.0
3.0
2.0
2.0
3.0
3.0
2.0
2.0
3.0
3.0
*555C
to 255C
Min
5
5
2
2
1
1
1
1
1
1
1
1
Typ*
23
16
11
9
7
5
4
3
12
11
6
5
Max
35
24
16
14
12
10
6
5
t855C
Min
5
5
2
2
1
1
1
1
1
1
1
1
Max
38
27
19
17
15
13
9
8
t1255C
Min
5
5
2
2
1
1
1
1
1
1
1
1
Max
41
30
22
20
18
16
12
11
Unit
ns
t
OFF
Turn−Off Time
(Figures 12 and 13)
R
L
= 300
W,
C
L
= 35 pF
(Figures 5 and 6)
ns
t
BBM
Minimum Break−Before−Make
Time
V
IS
= 3.0 V (Figure 4)
R
L
= 300
W,
C
L
= 35 pF
ns
*Typical Characteristics are at 25°C.
Typical @ 25, VCC = 5.0 V
C
IN
C
NO
or C
NC
C
COM
C
(ON)
Maximum Input Capacitance, Select Input
Analog I/O (Switch Off)
Common I/O (Switch Off)
Feedthrough (Switch On)
8
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
Symbol
BW
Parameter
Maximum On−Channel
*3
dB Bandwidth or
Minimum Frequency Response
(Figure 11)
Maximum Feedthrough On Loss
Condition
V
IN
=
0 dBm
V
IN
centered between V
CC
and GND
(Figure 7)
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND
(Figure 7)
f = 100 kHz; V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
V
IN =
V
CC
to GND, F
IS
= 20 kHz
t
r
= t
f
= 3 ns
R
IS
= 0
W,
C
L
= 1000 pF
Q = C
L
*
DV
OUT
(Figure 8)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600
W,
C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave
f = 100 kHz; V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
V
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
3.0
5.5
Typical
255C
145
170
175
−3
−3
−3
−93
−93
−93
1.5
3.0
Unit
MHz
V
ONL
dB
V
ISO
Off−Channel Isolation
(Figure 10)
Charge Injection Select Input to Common I/O
(Figure 15)
dB
Q
pC
THD
Total Harmonic Distortion
THD
)
Noise
(Figure 14)
Channel to Channel Crosstalk
%
5.5
5.5
3.0
0.1
dB
−90
−90
VCT
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5
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