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NSVR0230P2T5G

产品描述Schottky Diodes & Rectifiers SCHOTTKY DIODE SOD923
产品类别半导体    分立半导体   
文件大小82KB,共3页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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NSVR0230P2T5G概述

Schottky Diodes & Rectifiers SCHOTTKY DIODE SOD923

NSVR0230P2T5G规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Schottky Diodes & Rectifiers
RoHSDetails
产品
Product
Schottky Rectifiers
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOD-923
If - Forward Current200 mA
Vf - Forward Voltage500 mV
Ifsm - Forward Surge Current1 A
ConfigurationSingle
技术
Technology
Si
Ir - Reverse Current10 uA
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 125 C
资格
Qualification
AEC-Q100
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
200 mW
工厂包装数量
Factory Pack Quantity
8000
Vr - Reverse Voltage30 V
单位重量
Unit Weight
0.000635 oz

文档预览

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NSR0230P2, NSVR0230P2,
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.325 V (max) @ I
F
= 10 mA
Low Reverse Current
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current DC
Forward Current Surge Peak
(60 Hz, 1 cycle)
ESD Rating: Class 3B per Human Body Model
ESD Rating:
Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Symbol
V
R
I
F
I
FSM
Value
30
200
1.0
Unit
Vdc
mA
A
2
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MARKING
DIAGRAM
1
K MG
G
SOD−923
CASE 514AA
1
2
K = Specific Device Code*
(Character is rotated 270° clockwise)
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
1. FR−5 Minimum Pad.
Symbol
P
D
Max
200
2.0
R
qJA
T
J
, T
stg
600
−55
to
+125
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
NSR0230P2T5G
Package
SOD−923
(Pb−Free)
Shipping†
2 mm Pitch
8000/Tape & Reel
2 mm Pitch
8000/Tape & Reel
NSVR0230P2T5G SOD−923
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 200 mA)
Symbol
I
R
V
F
Min
Typ
Max
10
Unit
mA
Vdc
0.325
0.500
©
Semiconductor Components Industries, LLC, 2013
September, 2013
Rev. 2
1
Publication Order Number:
NSR0230P2/D

 
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