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MV1N5807U4M

产品描述Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, CERAMIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小269KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

MV1N5807U4M概述

Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, CERAMIC PACKAGE-2

MV1N5807U4M规格参数

参数名称属性值
包装说明CERAMIC PACKAGE-2
针数2
Reach Compliance Codecompli
ECCN代码EAR99
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-CBCC-N2
JESD-609代码e4
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最大输出电流6 A
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
认证状态Not Qualified
最大重复峰值反向电压50 V
表面贴装YES
端子面层GOLD
端子形式NO LEAD
端子位置BOTTOM
Base Number Matches1

文档预览

下载PDF文档
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
125 Amps Surge Rating
Ceramic Surface Mount (U4 Style)
DEVICES
LEVELS
1N5807U4
1N5809U4
1N5811U4
MX
MV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive
1N5807U4
1N5807U4M
Reverse Voltage
1N5809U4
1N5809U4M
1N5811U4
1N5811U4M
Average Forward Current, Te
C
= 75°
Peak Surge Forward Current @ t
p
= 8.3ms, half sine
T
C
= 25°C, T = 1/120s
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
Symbol
Value
50
100
150
6
125
6.5
-65°C to 175°C
-65°C to 175°C
Unit
V
RWM
V
I
F
I
FSM
R
θjc
T
C
T
stg
A
A
°C/W
°C
°C
U4
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I
F
= 3A, T
A
= 25°C*
I
F
= 4A, T
A
= 25°C*
I
F
= 6A, T
A
= 25°C*
Reverse Current
V
R
= 50, T
A
= 25°C
V
R
= 100, T
A
= 25°C
V
R
= 150, T
A
= 25°C
Reverse Current
V
R
= 50, T
A
= 125°C
V
R
= 100, T
A
= 125°C
V
R
= 150, T
A
= 125°C
1N5807U4
1N5809U4
1N5811U4
1N5807U4
1N5809U4
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
1N5807U4M
1N5809U4M
1N5811U4M
Symbol
Min.
Max.
.865
.875
.925
Unit
V
F
V
I
R
5
μA
U4M
I
R
525
μA
Reverse Recovery Time
I
F
= I
RM
= 1.0A
1N5807U4
i
(REC)
= 0.1A
1N5809U4
di/dt = 100A/us (min)
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
Trr
525
μA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
T4-LDS-0147 Rev. 1 (091865)
Page 1 of 4

 
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