TA4017FT
TOSHIBA Bipolar Linear Integrated Circuit
Silicon Monolithic
TA4017FT
VHF Wide Band Amplifier Applications
Features
•
•
•
High gain: |S21|2 = 13dB (@45 MHz)
Low distortion: IM3 = 42dB (@45 MHz)
Operating supply voltage: V
CC
= 4.75 V~5.25 V
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
Total power dissipation
Operating temperature
Storage temperature
Symbol
V
CC
P
D
(Note 1)
T
opr
T
stg
Rating
5.5
300
−40
to 85
−55
to 150
Unit
V
mW
°C
°C
Weight: 0.0045g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
Note 1: When mounted on the glass epoxy of 2.5 cm
×
1.6 t
Pin Assignment
OUT GND OUT
(1)
(2)
6
5
4
U5
1
2
3
IN (1) IN (2) V
CC
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2007-11-01
TA4017FT
Electrical Characteristics
(Ta
=
25°C, V
CC
=
5 V, Zg
=
Zl
=
50
Ω)
Characteristics
Circuit current
Band width
Input return loss
Insertion gain
Isolation
Output return loss
Noise figure
Output power at 1dB gain
compression
Symbol
I
CC
BW
|S11|
|S21|
2
2
2
2
Test
Circuit
Test Condition
Non Carrier
(Note 2)
f
=
45 MHz
f
=
45 MHz
f
=
400 MHz
f
=
45 MHz
Min
15
0.7
⎯
10
⎯
⎯
⎯
⎯
⎯
0
⎯
34
⎯
Typ.
19
1
−0.8
13
12.5
−40
−3.5
3
3
2
2
42
42
Max
25
⎯
⎯
16
⎯
⎯
⎯
4.5
⎯
⎯
⎯
⎯
Unit
mA
GHz
dB
dB
dB
dB
dB
|S12|
|S22|
NF
Fig1
f
=
45 MHz
f
=
45 MHz
f
=
400 MHz
f
=
45 MHz
f
=
400 MHz
f1
=
45 MHz, f2
=
44 MHz,
Pin
= −20dBmW
f1
=
400 MHz, f2
=
399 MHz,
Pin
= −20dBmW
Po1dB
dBmW
3
rd
order inter modulation
IM3
dB
⎯
Note 2: BW is the frequency of 3dB down from |S21| at 45 MHz.
CAUTION: This device electrostatic sensitivity. Please handle with caution.
2
2
2007-11-01
TA4017FT
1000 pF
1000 pF
33
Ω
1
2
3
IN1
IN2
V
CC
OUT1
GND
OUT2
6
5
4
1 kΩ
1 kΩ
1000 pF
100 pF
1000 pF
10000 pF
Figure 1
Measurement circuit
3
6
4
1
2
5
Figure 2
Notice
Equivalent circuit
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
3
2007-11-01
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