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TA4012AFE

产品描述UHF Wide Band Amplifier Applications
产品类别无线/射频/通信    射频和微波   
文件大小109KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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TA4012AFE概述

UHF Wide Band Amplifier Applications

TA4012AFE规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Toshiba(东芝)
包装说明TSSOP6,.06,20
Reach Compliance Codeunknow
特性阻抗50 Ω
构造COMPONENT
增益10 dB
安装特点SURFACE MOUNT
功能数量1
端子数量6
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TSSOP6,.06,20
电源2 V
射频/微波设备类型WIDE BAND LOW POWER
最大压摆率8.5 mA
表面贴装YES
技术BIPOLAR

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TA4012AFE
TOSHIBA Bipolar Linear Integrated Circuit
Silicon Monolithic
TA4012AFE
UHF Wide Band Amplifier Applications
Features
Low current: I
CC
= 6.5 mA
Wide band: f = 2.0 GHz (3dB down)
Operating supply voltage: V
CC
= 1.5~2.2 V
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage 1
Supply voltage 2
Total power dissipation
Operating temperature
Storage temperature
(Note 1)
(Note 2)
Symbol
V
CC
1
V
CC
2
P
D
T
opr
T
stg
Rating
2.2
3
300
−40~85
−55~150
Unit
V
V
mW
°C
°C
Weight: 0.003 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
Note 1: When V
CC
is operated at less than 1/4 duty cycle
Note 2: When mounted on the glass epoxy of 2.5 cm
×
1.6 t
Marking
OUT
5
COLLECTOR
4
U4
1
2
3
V
CC
GND IN
1
2007-11-01

TA4012AFE相似产品对比

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描述 UHF Wide Band Amplifier Applications UHF Wide Band Amplifier Applications

 
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