5mm Phototransistor
PT1504-6B
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
․The
product itself will remain within RoHS compliant version.
Description
․
PT1504-6B is a high speed and high sensitive NPN silicon
NPN epitaxial planar phototransistor molded in a standard 5 mm package.
Due to is black epoxy the device is sensitive to visible and near
Infrared radiation.
Applications
․
Infrared applied system
․
Camera
․
Cockroach catcher
1
Revision
Copyright ©
:5
LifecyclePhase:
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No: DPT-0000290
Release Date:2013-06-07
19:22:20.0
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Phototransistor
PT1504-6B
Device Selection Guide
Chip
Materials
Silicon
Lens Color
Black
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature
Power Dissipation at
(or below)
Symbol
V
CEO
V
ECO
I
C
T
opr
T
stg
Tsol
P
c
Rating
30
5
20
-25~+85
-40~ +100
260℃
75
Unit
V
V
mA
°C
°C
°C
mW
25℃Free Air Temperature
Notes:
*1:Soldering time≦5 seconds.
2
Revision
Copyright ©
:5
LifecyclePhase:
Release Date:2013-06-07 19:22:20.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No: DPT-0000290
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Phototransistor
PT1504-6B
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Rang Of Spectral Bandwidth
Wavelength of Peak Sensitivity
Symbol
Min.
Typ.
Max.
Unit
Condition
I
C
=100μA
2
Ee=0mW/cm
I
E
=100μA
2
Ee=0mW/cm
I
C
=2mA
2
Ee=1mW/cm
V
CE
=5V
I
C
=1mA
RL=1000Ω
Ee=0mW/cm
V
CE
=20V
2
Ee=1mW/cm
V
CE
=5V
λp=940nm
----
----
2
BV
CEO
30
-----
-----
V
BV
ECO
V
CE(sat)
t
r
t
f
I
CEO
I
C(on)
λ
0.5
λ
P
5
-----
-----
-----
-----
1.77
760
-----
-----
-----
15
15
-----
4.0
-----
940
-----
0.4
-----
-----
100
-----
1100
-----
V
V
μS
nA
mA
nm
nm
3
Revision
Copyright ©
:5
LifecyclePhase:
Release Date:2013-06-07 19:22:20.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No: DPT-0000290
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Phototransistor
PT1504-6B
Typical Electro-Optical Characteristics Curves
Collector Power Dissipation vs. Ambient Temperature
Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
700
800
900
1000 1100 1300
Relative Collector Current vs. Ambient Temperature
Collector Current vs. Irradiance
160
140
120
100
80
60
40
20
0
0
10
20 30
40 50
60 70
2
100
C
10
1
0.1
0.01
0.5
1
1.5
2
3
4
Revision
Copyright ©
:5
LifecyclePhase:
Release Date:2013-06-07 19:22:20.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No: DPT-0000290
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Phototransistor
PT1504-6B
Collector Dark Current vs. Ambient Temperature
Collector Current vs. Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
5
Revision
Copyright ©
:5
LifecyclePhase:
Release Date:2013-06-07 19:22:20.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No: DPT-0000290
www.everlight.com
Expired Period: Forever