Phototransistors Narrow Rcvng Angle 935nm
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | TT Electronics |
产品种类 Product Category | Phototransistors |
RoHS | Details |
产品 Product | Phototransistors |
封装 / 箱体 Package / Case | T-1-2 |
安装风格 Mounting Style | Through Hole |
Peak Wavelength | 935 nm |
Maximum On-State Collector Current | 5.95 mA |
Collector- Emitter Voltage VCEO Max | 30 V |
Dark Current | 100 nA |
Pd-功率耗散 Pd - Power Dissipation | 100 mW |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 100 C |
高度 Height | 5.08 mm |
Lens Color/Style | Blue |
系列 Packaging | Bulk |
类型 Type | NPN Silicon Phototransistor |
Wavelength | 935 nm |
Collector-Emitter Breakdown Voltage | 30 V |
Collector-Emitter Saturation Voltage | 0.4 V |
工厂包装数量 Factory Pack Quantity | 500 |
OP505B | OP505A | |
---|---|---|
描述 | Phototransistors Narrow Rcvng Angle 935nm | Phototransistors PHOTOSENSOR |
Product Attribute | Attribute Value | Attribute Value |
制造商 Manufacturer |
TT Electronics | TT Electronics |
产品种类 Product Category |
Phototransistors | Phototransistors |
RoHS | Details | Details |
产品 Product |
Phototransistors | Phototransistors |
封装 / 箱体 Package / Case |
T-1-2 | T-1-2 |
安装风格 Mounting Style |
Through Hole | Through Hole |
Peak Wavelength | 935 nm | 935 nm |
Collector- Emitter Voltage VCEO Max | 30 V | 30 V |
Dark Current | 100 nA | 100 nA |
Pd-功率耗散 Pd - Power Dissipation |
100 mW | 100 mW |
最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C |
最大工作温度 Maximum Operating Temperature |
+ 100 C | + 100 C |
高度 Height |
5.08 mm | 5.08 mm |
Lens Color/Style | Blue | Blue |
系列 Packaging |
Bulk | Bulk |
类型 Type |
NPN Silicon Phototransistor | NPN Silicon Phototransistor |
Wavelength | 935 nm | 935 nm |
Collector-Emitter Breakdown Voltage | 30 V | 30 V |
Collector-Emitter Saturation Voltage | 0.4 V | 0.4 V |
工厂包装数量 Factory Pack Quantity |
500 | 500 |
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