IL221AT/222AT/223AT
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Low Input Current, High Gain, with Base Connection
FEATURES
A
1
C
2
NC
3
NC
4
8
NC
7
B
6
C
5
E
• Isolation test voltage, 4000 V
RMS
• Industry standard SOIC-8 surface mountable
package
• Standard lead spacing, 0.05"
• Available only on tape and reel (conforms to
EIA standard RS481A)
• Compatible with dual wave, vapor phase and IR reflow
soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
i179022
DESCRIPTION
The IL221AT/IL222AT/IL223AT is a high current transfer
ratio (CTR) optocoupler with a gallium arsenide infrared LED
emitter and a silicon NPN photodarlington transistor
detector.
The device has a CTR tested at 1.0 mA LED current. This
low drive current permits easy interfacing from CMOS to
LSTTL or TTL.
This optocoupler is constructed in a standard SOIC-8 foot
print which makes it ideally suited for high density
applications. In addition to eliminating through-hole
requirements, this package conforms to standards for
surface mount devices.
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• CUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 available with option 1
ORDER INFORMATION
PART
IL221AT
IL222AT
IL223AT
REMARKS
CTR > 100 %, SOIC-8
CTR > 200 %, SOIC-8
CTR > 500 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
I
CMAX DC
I
CMAX
Power dissipation
Derate linearly from 25 °C
t < 1.0 ms
BV
CEO
BV
ECO
BV
CBO
I
CMAX DC
I
CMAX
P
diss
30
5.0
70
50
100
150
2.0
V
V
V
mA
mW
mW
mW/°C
V
R
I
F
P
diss
6.0
60
90
1.2
V
mA
mW
mW/°C
TEST CONDITION
SYMBOL
VALUE
UNIT
www.vishay.com
330
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83617
Rev. 1.8, 08-May-08
IL221AT/222AT/223AT
Optocoupler, Photodarlington Output,
Vishay Semiconductors
Low Input Current, High Gain, with Base
Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
Total package dissipation
(at 25 °C ambient)(LED and detector)
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time at 260 °C
T
stg
T
amb
t = 1.0 s
V
ISO
P
tot
4000
240
3.2
- 55 to + 150
- 55 to + 100
10
V
RMS
mW
mW/°C
°C
°C
s
TEST CONDITION
SYMBOL
VALUE
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Emitter emitter breakdown voltage
Collector emitter capacitance
COUPLER
Saturation voltage, collector emitter
Capacitance (input to output)
Resistance (input to output)
I
CE
= 0.5 mA
V
CEsat
C
IO
R
IO
0.5
100
1.0
V
pF
GΩ
I
C
= 100 µA
I
E
= 100 µA
I
C
= 10 µA
V
CE
= 10 V
BV
CEO
BV
ECO
BV
CBO
C
CE
30
5.0
70
3.4
V
V
V
pF
I
F
= 1.0 mA
V
R
= 6 V
V
R
= 0 V, f = 1.0 MHz
V
F
I
R
C
O
1.0
0.1
25
1.5
100
V
µA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
I
F
= 1.0 mA, V
CE
= 5.0 V
PART
IL221AT
IL222AT
IL223AT
SYMBOL
CTR
DC
CTR
DC
CTR
DC
MIN.
100
200
500
TYP.
MAX.
UNIT
%
%
%
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
CTI
175
6000
560
350
150
TEST CONDITION
SYMBOL
MIN.
TYP.
55/100/21
399
V
V
mW
mA
MAX.
UNIT
Document Number: 83617
Rev. 1.8, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
331
IL221AT/222AT/223AT
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Low Input Current, High Gain, with Base
Connection
SAFETY AND INSULATION RATINGS
PARAMETER
T
SI
Creepage distance
Clearance distance
Insulation thickness, reinforced rated
per IEC 60950 2.10.5.1
4
4
0.2
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
165
UNIT
°C
mm
mm
mm
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
1.4
3
T
A
= - 55 °C
T
A
= 25 °C
T
A
= - 20 °C
T
A
= 25 °C
T
A
= 50 °C
T
A
= 70 °C
V
F
- Forward
Voltage
(V)
1.3
1.2
1.1
1.0
0.9
Normalized
CTR
cb
Normalized
to:
I
F
= 1 mA, T
A
= 25 °C
V
CB
= 10
V
2
1
T
A
= 100 °C
0.8
0.7
0.1
1
10
100
0
0.1
iil221at_03
0
10
100
iil221at_01
I
F
- Forward Current (mA)
I
F
- LED Current (mA)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 3 - Normalized CTR
cb
vs. I
F
10 000
100
Duty Factor
T
A
= - 20 °C
T
A
= 25 °C
T
A
= 50 °C
T
A
= 70 °C
I
F
(pk)- Peak LED Current (mA)
0.005
0.01
1000
0.02
0.05
0.1
0.2
0.5
100
Normalized
CTR
ce
t
DF =
τ
/t
10
1
Normalized
to:
I
F
= 1 mA,
V
CE
= 5
V
T
A
= 25 °C
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.1
0.1
iil221at_04
1
10
100
iil221at_02
t- LED Pulse Duration (s)
I
F
- LED Current (mA)
Fig. 2 - Peak LED Current vs. Duty Factor,
τ
Fig. 4 - Normalized CTR
CE
vs. LED Current
www.vishay.com
332
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83617
Rev. 1.8, 08-May-08
IL221AT/222AT/223AT
Optocoupler, Photodarlington Output,
Vishay Semiconductors
Low Input Current, High Gain, with Base
Connection
0.10
100
I
CB
- Photocurrent (µA)
I
F
/I
CB
- CTR
cb
(%)
10
I
CB
I
CB
I
CB
I
CB
= - 20 °C
= 25 °C
= 50 °C
= 70 °C
0.05
T = - 20 °C
A
T = 25 °C
A
T = 50 °C
A
T = 70 °C
A
0.00
0.1
1
10
100
1
0.1
0.1
iil221at_08
iil221at_05
I
F
- LED Current (mA)
Fig. 5 - CTR
CE
vs. LED Current
I
F
- LED Current (mA)
Fig. 8 - Photocurrent vs. LED Current
CTR
CE
- Current Transfer Ratio (%)
2000
T
A
= - 20 °C
T = 25 °C
A
1500 T = 50 °C
A
T = 70 °C
A
1000
V
CE
= 10
V
1000
T
A
= - 20 °C
Normalized
to:
T
A
= 20 °C
I
F
= 1 mA,T
A
= 25 °C
T
A
= 50 °C
V
CB
= 10
V
T = 70 °C
A
Normalized
I
CB
100
10
500
1
0
0.1
1
10
100
0.1
0.1
iil221at_09
1
10
100
iil221at_06
I
F
- LED Current (mA)
Fig. 6 - CTR vs. LED Current
I
F
- LED Current (mA)
Fig. 9 - Normalized I
CB
vs. I
F
1000
I
CE
- Collector Current (mA)
100
T
A
T
A
T
A
T
A
= - 20 °C
= 25 °C
= 50 °C
= 70 °C
V
CE
= 10
V
I
F
V
O
t
D
t
R
t
PLH
V
TH
= 1.5
V
t
PHL
t
S
t
F
10
1
0.1
iil221at_07
1
10
100
iil221at_10
I
F
- LED Current (mA)
Fig. 10 - Switching Timing
Fig. 7 - Collector Current vs. LED Current
Document Number: 83617
Rev. 1.8, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
333
IL221AT/222AT/223AT
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Low Input Current, High Gain, with Base
Connection
V
CC
= 10
V
F = 10 kHz,
DF = 50
%
R
L
V
O
I
F
= 5 mA
iil221at_11
Fig. 11 - Switching Schematic
PACKAGE DIMENSIONS
in inches (millimeters)
0.120 ± 0.005
(3.05 ± 0.13)
R 0.010 (0.13)
0.240
(6.10)
CL
0.154 ± 0.005
(3.91 ± 0.13)
0.050 (1.27)
0.014 (0.36)
0.036 (0.91)
0.170 (4.32)
0.045 (1.14)
Pin one ID
0.192 ± 0.005
0.016
(0.41)
0.260 (6.6)
7°
0.058 ± 0.005
0.015 ± 0.002
40°
(1.49 ± 0.13)
(0.38 ± 0.05)
0.125 ± 0.005
0.008 (0.20)
5° max.
(3.18 ± 0.13)
(4.88 ± 0.13)
0.004 (0.10)
0.008 (0.20)
0.050 (1.27) typ.
0.020 ± 0.004
ISO method A
0.021 (0.53)
(0.51 ± 0.10)
2 places
i178003
R 0.010
(0.25) max.
Lead coplanarity
± 0.0015 (0.04) max.
www.vishay.com
334
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83617
Rev. 1.8, 08-May-08
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
